Magnetic and electronic properties of thin (Ga,Mn)N films due to an embedded Mn-delta-doping layer

H. C. Jeon, S. J. Lee, T. W. Kang, K. J. Chang, Yung Kee Yeo, T. F. George

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The magnetization curve as a function of the magnetic field at 5 K showed that the magnetization in the (Ga 0.995Mn 0.005)N thin film was significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga 0.995Mn 0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance in the (Ga 0.995Mn 0.005)N thin film.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages653-654
Number of pages2
DOIs
StatePublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
Country/TerritoryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Keywords

  • (Ga,Mn)N thin film
  • Curie temperature
  • Mn delta-doping

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