Magnetic and optical properties of self-organized InMnAs quantum dots

Im Taek Yoon; Sejoon Lee; Yoon Shon; Seung Woong Lee; Tae Won Kang

doi:10.1016/j.jpcs.2010.12.008

Magnetic and optical properties of self-organized InMnAs quantum dots

Im Taek Yoon, Sejoon Lee, Yoon Shon, Seung Woong Lee, Tae Won Kang

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (1 0 0) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, T_C=80 K. It is likely that the ferromagnetic exchange coupling of sample with T_C=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. PL emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 °C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature.

Original language	English
Pages (from-to)	181-184
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	72
Issue number	3
DOIs	https://doi.org/10.1016/j.jpcs.2010.12.008
State	Published - Mar 2011

Keywords

A. Nanostructures
A. Semiconductors
D. Magnetic properties
D. Optical properties

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10.1016/j.jpcs.2010.12.008

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title = "Magnetic and optical properties of self-organized InMnAs quantum dots",

abstract = "Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (1 0 0) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, TC=80 K. It is likely that the ferromagnetic exchange coupling of sample with TC=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. PL emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 °C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature.",

keywords = "A. Nanostructures, A. Semiconductors, D. Magnetic properties, D. Optical properties",

author = "Yoon, {Im Taek} and Sejoon Lee and Yoon Shon and Lee, {Seung Woong} and Kang, {Tae Won}",

year = "2011",

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doi = "10.1016/j.jpcs.2010.12.008",

language = "English",

volume = "72",

pages = "181--184",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Ltd",

number = "3",

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TY - JOUR

T1 - Magnetic and optical properties of self-organized InMnAs quantum dots

AU - Yoon, Im Taek

AU - Lee, Sejoon

AU - Shon, Yoon

AU - Lee, Seung Woong

AU - Kang, Tae Won

PY - 2011/3

Y1 - 2011/3

N2 - Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (1 0 0) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, TC=80 K. It is likely that the ferromagnetic exchange coupling of sample with TC=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. PL emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 °C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature.

AB - Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (1 0 0) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, TC=80 K. It is likely that the ferromagnetic exchange coupling of sample with TC=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. PL emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 °C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature.

KW - A. Nanostructures

KW - A. Semiconductors

KW - D. Magnetic properties

KW - D. Optical properties

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U2 - 10.1016/j.jpcs.2010.12.008

DO - 10.1016/j.jpcs.2010.12.008

M3 - Article

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SN - 0022-3697

VL - 72

SP - 181

EP - 184

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 3

ER -

Magnetic and optical properties of self-organized InMnAs quantum dots

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Keywords

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