Abstract
Diluted magnetic semiconductor Zn1-xMnxO (x = 0.05) thin films were prepared using ultrasonic spray pyrolysis. The films were additionally doped with nitrogen in order to obtain a p-type conductivity. Aqueous solutions of zinc acetate (0.5 mol/1), manganese acetate (0.5 mol/1) and ammonium acetate (2.5 mol/1) were used as sources of Zn, Mn and N, respectively. The hole concentration in the nitrogen-doped films was in the range of 1015 - 1018 cm-3 at room temperature. The dependence of the magnetization on the magnetic field (M-H) for the highly nitrogen-doped Zn0.95Mn0.05O sample showed a hysteresis loop at low temperatures. A Curie temperature of around 80 K for the sample with a hole concentration of 1018 cm-3 was determined from the temperature dependence of the magnetization.
Original language | English |
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Pages (from-to) | 192-195 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 1 |
DOIs | |
State | Published - Jul 2008 |
Keywords
- Ferromagnetic semiconductor
- Ultrasonic spray pyrolysis
- ZnMnO