Magnetic properties and magnetoresistance of CdMnS:A u based structures prepared by co-evaporation

Jun He, Ming Li, D. H. Kim, J. C. Lee, D. J. Lee, De Jun Fu, T. W. Kang

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3 Scopus citations

Abstract

Polycrystalline CdMnS and CdMnS:Au films with hexagonal structure on Si(111) substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS:Au samples with an average crystallite size of 90 nm and Mn concentration of 5.0 at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS:Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100Oe at 77 K.

Original languageEnglish
Article number078501
JournalChinese Physics Letters
Volume27
Issue number7
DOIs
StatePublished - Jul 2010

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