Abstract
Polycrystalline CdMnS and CdMnS:Au films with hexagonal structure on Si(111) substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS:Au samples with an average crystallite size of 90 nm and Mn concentration of 5.0 at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS:Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100Oe at 77 K.
Original language | English |
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Article number | 078501 |
Journal | Chinese Physics Letters |
Volume | 27 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2010 |