Magnetic properties of Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates

Y. H. Kwon; T. W. Kang; Y. Shon; H. Y. Cho; H. C. Jeon; Y. S. Park; D. U. Lee; T. W. Kim; D. J. Fu; X. J. Fan

doi:10.1016/j.ssc.2008.05.029

Magnetic properties of Mn⁺-implanted and annealed Si_1-xGe_x thin films grown on p-Si (100) substrates

Y. H. Kwon, T. W. Kang, Y. Shon, H. Y. Cho, H. C. Jeon, Y. S. Park, D. U. Lee, T. W. Kim, D. J. Fu, X. J. Fan

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Mn⁺-implanted and annealed Si_1-xGe_x thin films grown on p-Si (100) substrates were formed with the goal of producing (Si_1-xGe_x)_1-yMn_y with a high ferromagnetic transition temperature (T_c). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si_1-xGe_x thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn⁺-implanted and annealed Si_1-xGe_x thin films, and the magnetization curves as functions of the temperature showed that the T_c value was above 300 K. These results indicate that the formed (Si_1-xGe_x)_1-yMn_y thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.

Original language	English
Pages (from-to)	161-164
Number of pages	4
Journal	Solid State Communications
Volume	147
Issue number	5-6
DOIs	https://doi.org/10.1016/j.ssc.2008.05.029
State	Published - Aug 2008

Keywords

A. Semiconductor
C. Impurities in semiconductors

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10.1016/j.ssc.2008.05.029

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@article{a785bae5cbf04f7398cbd568ea9ae01e,

title = "Magnetic properties of Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates",

abstract = "Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1-xGex)1-yMny with a high ferromagnetic transition temperature (Tc). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1-xGex thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn+-implanted and annealed Si1-xGex thin films, and the magnetization curves as functions of the temperature showed that the Tc value was above 300 K. These results indicate that the formed (Si1-xGex)1-yMny thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.",

keywords = "A. Semiconductor, C. Impurities in semiconductors",

author = "Kwon, {Y. H.} and Kang, {T. W.} and Y. Shon and Cho, {H. Y.} and Jeon, {H. C.} and Park, {Y. S.} and Lee, {D. U.} and Kim, {T. W.} and Fu, {D. J.} and Fan, {X. J.}",

year = "2008",

month = aug,

doi = "10.1016/j.ssc.2008.05.029",

language = "English",

volume = "147",

pages = "161--164",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "5-6",

}

TY - JOUR

T1 - Magnetic properties of Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates

AU - Kwon, Y. H.

AU - Kang, T. W.

AU - Shon, Y.

AU - Cho, H. Y.

AU - Jeon, H. C.

AU - Park, Y. S.

AU - Lee, D. U.

AU - Kim, T. W.

AU - Fu, D. J.

AU - Fan, X. J.

PY - 2008/8

Y1 - 2008/8

N2 - Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1-xGex)1-yMny with a high ferromagnetic transition temperature (Tc). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1-xGex thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn+-implanted and annealed Si1-xGex thin films, and the magnetization curves as functions of the temperature showed that the Tc value was above 300 K. These results indicate that the formed (Si1-xGex)1-yMny thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.

AB - Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1-xGex)1-yMny with a high ferromagnetic transition temperature (Tc). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1-xGex thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn+-implanted and annealed Si1-xGex thin films, and the magnetization curves as functions of the temperature showed that the Tc value was above 300 K. These results indicate that the formed (Si1-xGex)1-yMny thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.

KW - A. Semiconductor

KW - C. Impurities in semiconductors

UR - http://www.scopus.com/inward/record.url?scp=46049084991&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2008.05.029

DO - 10.1016/j.ssc.2008.05.029

M3 - Article

AN - SCOPUS:46049084991

SN - 0038-1098

VL - 147

SP - 161

EP - 164

JO - Solid State Communications

JF - Solid State Communications

IS - 5-6

ER -

Magnetic properties of Mn⁺-implanted and annealed Si_1-xGe_x thin films grown on p-Si (100) substrates

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Keywords

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