Magnetic properties of Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates

Y. H. Kwon; T. W. Kang; Y. Shon; H. Y. Cho; H. C. Jeon; Y. S. Park; D. U. Lee; T. W. Kim; D. J. Fu; X. J. Fan

doi:10.1016/j.ssc.2008.05.029

Magnetic properties of Mn⁺-implanted and annealed Si_1-xGe_x thin films grown on p-Si (100) substrates

Y. H. Kwon
, T. W. Kang
, Y. Shon
, H. Y. Cho
, H. C. Jeon
, Y. S. Park
, D. U. Lee
, T. W. Kim
, D. J. Fu
, X. J. Fan

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Mn⁺-implanted and annealed Si_1-xGe_x thin films grown on p-Si (100) substrates were formed with the goal of producing (Si_1-xGe_x)_1-yMn_y with a high ferromagnetic transition temperature (T_c). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si_1-xGe_x thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn⁺-implanted and annealed Si_1-xGe_x thin films, and the magnetization curves as functions of the temperature showed that the T_c value was above 300 K. These results indicate that the formed (Si_1-xGe_x)_1-yMn_y thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.

Original language	English
Pages (from-to)	161-164
Number of pages	4
Journal	Solid State Communications
Volume	147
Issue number	5-6
DOIs	https://doi.org/10.1016/j.ssc.2008.05.029
State	Published - Aug 2008

Keywords

A. Semiconductor
C. Impurities in semiconductors

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10.1016/j.ssc.2008.05.029

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@article{a785bae5cbf04f7398cbd568ea9ae01e,

title = "Magnetic properties of Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates",

abstract = "Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1-xGex)1-yMny with a high ferromagnetic transition temperature (Tc). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1-xGex thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn+-implanted and annealed Si1-xGex thin films, and the magnetization curves as functions of the temperature showed that the Tc value was above 300 K. These results indicate that the formed (Si1-xGex)1-yMny thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.",

keywords = "A. Semiconductor, C. Impurities in semiconductors",

author = "Kwon, \{Y. H.\} and Kang, \{T. W.\} and Y. Shon and Cho, \{H. Y.\} and Jeon, \{H. C.\} and Park, \{Y. S.\} and Lee, \{D. U.\} and Kim, \{T. W.\} and Fu, \{D. J.\} and Fan, \{X. J.\}",

year = "2008",

month = aug,

doi = "10.1016/j.ssc.2008.05.029",

language = "English",

volume = "147",

pages = "161--164",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "5-6",

}

TY - JOUR

T1 - Magnetic properties of Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates

AU - Kwon, Y. H.

AU - Kang, T. W.

AU - Shon, Y.

AU - Cho, H. Y.

AU - Jeon, H. C.

AU - Park, Y. S.

AU - Lee, D. U.

AU - Kim, T. W.

AU - Fu, D. J.

AU - Fan, X. J.

PY - 2008/8

Y1 - 2008/8

N2 - Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1-xGex)1-yMny with a high ferromagnetic transition temperature (Tc). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1-xGex thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn+-implanted and annealed Si1-xGex thin films, and the magnetization curves as functions of the temperature showed that the Tc value was above 300 K. These results indicate that the formed (Si1-xGex)1-yMny thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.

AB - Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1-xGex)1-yMny with a high ferromagnetic transition temperature (Tc). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1-xGex thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn+-implanted and annealed Si1-xGex thin films, and the magnetization curves as functions of the temperature showed that the Tc value was above 300 K. These results indicate that the formed (Si1-xGex)1-yMny thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.

KW - A. Semiconductor

KW - C. Impurities in semiconductors

UR - https://www.scopus.com/pages/publications/46049084991

U2 - 10.1016/j.ssc.2008.05.029

DO - 10.1016/j.ssc.2008.05.029

M3 - Article

AN - SCOPUS:46049084991

SN - 0038-1098

VL - 147

SP - 161

EP - 164

JO - Solid State Communications

JF - Solid State Communications

IS - 5-6

ER -

Magnetic properties of Mn⁺-implanted and annealed Si_1-xGe_x thin films grown on p-Si (100) substrates

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Keywords

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