Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge

M. K. Bera; C. Mahata; C. K. Maiti

doi:10.1109/IWPSD.2007.4472464

Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge

M. K. Bera, C. Mahata, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping kinetics and chemical nature of defects present in ultrathin high-k dielectric films deposited on p-Ge (100) substrate. Both the band and defect-related electron states were characterized through EPR, IPE, C-V and I-V measurements under UV-illumination. The interface trap spectrum in Ge/high-k oxide systems appears to be dominated by slow acceptor states with a broad energy distribution as major contribution comes from the imperfections located in the insulating layer. However, the oxynitride samples demonstrate lower defect or trapping behavior over non-nitrided samples.

Original language	English
Title of host publication	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages	107-110
Number of pages	4
DOIs	https://doi.org/10.1109/IWPSD.2007.4472464
State	Published - 2007
Event	14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India Duration: 16 Dec 2007 → 20 Dec 2007

Publication series

Name	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Conference

Conference	14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Country/Territory	India
City	Mumbai
Period	16/12/07 → 20/12/07

Keywords

Charge trapping
Ge
High-k dielectric
Internal photoemission
Magnetic resonance

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10.1109/IWPSD.2007.4472464

Cite this

Bera, M. K., Mahata, C., & Maiti, C. K. (2007). Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD (pp. 107-110). Article 4472464 (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). https://doi.org/10.1109/IWPSD.2007.4472464

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title = "Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge",

abstract = "Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping kinetics and chemical nature of defects present in ultrathin high-k dielectric films deposited on p-Ge (100) substrate. Both the band and defect-related electron states were characterized through EPR, IPE, C-V and I-V measurements under UV-illumination. The interface trap spectrum in Ge/high-k oxide systems appears to be dominated by slow acceptor states with a broad energy distribution as major contribution comes from the imperfections located in the insulating layer. However, the oxynitride samples demonstrate lower defect or trapping behavior over non-nitrided samples.",

keywords = "Charge trapping, Ge, High-k dielectric, Internal photoemission, Magnetic resonance",

author = "Bera, {M. K.} and C. Mahata and Maiti, {C. K.}",

year = "2007",

doi = "10.1109/IWPSD.2007.4472464",

language = "English",

isbn = "9781424417285",

series = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",

pages = "107--110",

booktitle = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",

note = "14th International Workshop on the Physics of Semiconductor Devices, IWPSD ; Conference date: 16-12-2007 Through 20-12-2007",

}

Bera, MK, Mahata, C & Maiti, CK 2007, Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge. in Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD., 4472464, Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, pp. 107-110, 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, India, 16/12/07. https://doi.org/10.1109/IWPSD.2007.4472464

Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge. / Bera, M. K.; Mahata, C.; Maiti, C. K.
Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 107-110 4472464 (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge

AU - Bera, M. K.

AU - Mahata, C.

AU - Maiti, C. K.

PY - 2007

Y1 - 2007

N2 - Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping kinetics and chemical nature of defects present in ultrathin high-k dielectric films deposited on p-Ge (100) substrate. Both the band and defect-related electron states were characterized through EPR, IPE, C-V and I-V measurements under UV-illumination. The interface trap spectrum in Ge/high-k oxide systems appears to be dominated by slow acceptor states with a broad energy distribution as major contribution comes from the imperfections located in the insulating layer. However, the oxynitride samples demonstrate lower defect or trapping behavior over non-nitrided samples.

AB - Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping kinetics and chemical nature of defects present in ultrathin high-k dielectric films deposited on p-Ge (100) substrate. Both the band and defect-related electron states were characterized through EPR, IPE, C-V and I-V measurements under UV-illumination. The interface trap spectrum in Ge/high-k oxide systems appears to be dominated by slow acceptor states with a broad energy distribution as major contribution comes from the imperfections located in the insulating layer. However, the oxynitride samples demonstrate lower defect or trapping behavior over non-nitrided samples.

KW - Charge trapping

KW - Ge

KW - High-k dielectric

KW - Internal photoemission

KW - Magnetic resonance

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DO - 10.1109/IWPSD.2007.4472464

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AN - SCOPUS:49749083467

SN - 9781424417285

T3 - Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

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BT - Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

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Bera MK, Mahata C, Maiti CK. Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 107-110. 4472464. (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). doi: 10.1109/IWPSD.2007.4472464

Magnetic resonance and internal photoemission study of trap centers in high-k dielectric films on Ge

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