Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

Shavkat U. Yuldashev; Vadim Sh Yalishev; Ziyodbek A. Yunusov; Seung Joo Lee; Hee Chang Jeon; Young Hae Kwon; Geun Tak Lee; Cheol Min Park; Tae Won Kang

doi:10.1016/j.cap.2015.04.025

Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

Shavkat U. Yuldashev, Vadim Sh Yalishev, Ziyodbek A. Yunusov, Seung Joo Lee, Hee Chang Jeon, Young Hae Kwon, Geun Tak Lee, Cheol Min Park, Tae Won Kang

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of T_C is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

Original language	English
Pages (from-to)	S22-S25
Journal	Current Applied Physics
Volume	15
DOIs	https://doi.org/10.1016/j.cap.2015.04.025
State	Published - 1 Sep 2015

Keywords

Diluted magnetic semiconductor
Ferroelectric gate
Magnetoelectric effect

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10.1016/j.cap.2015.04.025

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title = "Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures",

abstract = "The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.",

keywords = "Diluted magnetic semiconductor, Ferroelectric gate, Magnetoelectric effect",

author = "Yuldashev, {Shavkat U.} and Yalishev, {Vadim Sh} and Yunusov, {Ziyodbek A.} and Lee, {Seung Joo} and Jeon, {Hee Chang} and Kwon, {Young Hae} and Lee, {Geun Tak} and Park, {Cheol Min} and Kang, {Tae Won}",

year = "2015",

month = sep,

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doi = "10.1016/j.cap.2015.04.025",

language = "English",

volume = "15",

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journal = "Current Applied Physics",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

AU - Yuldashev, Shavkat U.

AU - Yalishev, Vadim Sh

AU - Yunusov, Ziyodbek A.

AU - Lee, Seung Joo

AU - Jeon, Hee Chang

AU - Kwon, Young Hae

AU - Lee, Geun Tak

AU - Park, Cheol Min

AU - Kang, Tae Won

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

AB - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

KW - Diluted magnetic semiconductor

KW - Ferroelectric gate

KW - Magnetoelectric effect

UR - http://www.scopus.com/inward/record.url?scp=84942370973&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2015.04.025

DO - 10.1016/j.cap.2015.04.025

M3 - Article

AN - SCOPUS:84942370973

SN - 1567-1739

VL - 15

SP - S22-S25

JO - Current Applied Physics

JF - Current Applied Physics

ER -

Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

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Keywords

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