Magnetoresistance of Ga1-xMnxAs Epitaxial Layers Doped by Be

Shavkat U. Yuldashev; Hyunsik Im; Vadim Sh Yalishev; Chang Soo Park; Tae Won Kang; Sanghoon Lee; Yuji Sasaki; Xin Liu; Jacek K. Furdyna

doi:10.1143/jjap.42.6256

Magnetoresistance of Ga_1-xMn_xAs Epitaxial Layers Doped by Be

Shavkat U. Yuldashev
, Hyunsik Im
, Vadim Sh Yalishev
, Chang Soo Park
, Tae Won Kang
, Sanghoon Lee
, Yuji Sasaki
, Xin Liu
, Jacek K. Furdyna

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Magnetoresistance (MR) measurements were performed on Ga _1-xMn_xAs (x = 0.03) additionally doped with Be. At low temperatures and in low magnetic fields, a positive MR signal was observed for measurements in the transverse (B ⊥ 1) geometry. However, at high temperatures, the MR becomes negative for all fields and all field orientations. The value of the negative MR has a maximum near the Curie temperature, and its magnitude depends strongly on the concentration of free holes. The observed MR behavior can be described by the magnetoimpurity scattering model in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the Ga_1-xMn_xAs MR data yields the value of the p-d exchange energy as |N₀β| ≈ 1.6eV.

Original language	English
Pages (from-to)	6256-6259
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	10
DOIs	https://doi.org/10.1143/jjap.42.6256
State	Published - Oct 2003

Keywords

Ferromagnetic
GaMnAs
Magnetoresistance
P-d exchange energy
Semiconductors

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10.1143/jjap.42.6256

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@article{41f87e3322cf41e6be26274604260cd8,

title = "Magnetoresistance of Ga1-xMnxAs Epitaxial Layers Doped by Be",

abstract = "Magnetoresistance (MR) measurements were performed on Ga 1-xMnxAs (x = 0.03) additionally doped with Be. At low temperatures and in low magnetic fields, a positive MR signal was observed for measurements in the transverse (B ⊥ 1) geometry. However, at high temperatures, the MR becomes negative for all fields and all field orientations. The value of the negative MR has a maximum near the Curie temperature, and its magnitude depends strongly on the concentration of free holes. The observed MR behavior can be described by the magnetoimpurity scattering model in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the Ga1-xMnxAs MR data yields the value of the p-d exchange energy as |N0β| ≈ 1.6eV.",

keywords = "Ferromagnetic, GaMnAs, Magnetoresistance, P-d exchange energy, Semiconductors",

author = "Yuldashev, \{Shavkat U.\} and Hyunsik Im and Yalishev, \{Vadim Sh\} and Park, \{Chang Soo\} and Kang, \{Tae Won\} and Sanghoon Lee and Yuji Sasaki and Xin Liu and Furdyna, \{Jacek K.\}",

year = "2003",

month = oct,

doi = "10.1143/jjap.42.6256",

language = "English",

volume = "42",

pages = "6256--6259",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "10",

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TY - JOUR

T1 - Magnetoresistance of Ga1-xMnxAs Epitaxial Layers Doped by Be

AU - Yuldashev, Shavkat U.

AU - Im, Hyunsik

AU - Yalishev, Vadim Sh

AU - Park, Chang Soo

AU - Kang, Tae Won

AU - Lee, Sanghoon

AU - Sasaki, Yuji

AU - Liu, Xin

AU - Furdyna, Jacek K.

PY - 2003/10

Y1 - 2003/10

N2 - Magnetoresistance (MR) measurements were performed on Ga 1-xMnxAs (x = 0.03) additionally doped with Be. At low temperatures and in low magnetic fields, a positive MR signal was observed for measurements in the transverse (B ⊥ 1) geometry. However, at high temperatures, the MR becomes negative for all fields and all field orientations. The value of the negative MR has a maximum near the Curie temperature, and its magnitude depends strongly on the concentration of free holes. The observed MR behavior can be described by the magnetoimpurity scattering model in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the Ga1-xMnxAs MR data yields the value of the p-d exchange energy as |N0β| ≈ 1.6eV.

AB - Magnetoresistance (MR) measurements were performed on Ga 1-xMnxAs (x = 0.03) additionally doped with Be. At low temperatures and in low magnetic fields, a positive MR signal was observed for measurements in the transverse (B ⊥ 1) geometry. However, at high temperatures, the MR becomes negative for all fields and all field orientations. The value of the negative MR has a maximum near the Curie temperature, and its magnitude depends strongly on the concentration of free holes. The observed MR behavior can be described by the magnetoimpurity scattering model in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the Ga1-xMnxAs MR data yields the value of the p-d exchange energy as |N0β| ≈ 1.6eV.

KW - Ferromagnetic

KW - GaMnAs

KW - Magnetoresistance

KW - P-d exchange energy

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/0346959715

U2 - 10.1143/jjap.42.6256

DO - 10.1143/jjap.42.6256

M3 - Article

AN - SCOPUS:0346959715

SN - 0021-4922

VL - 42

SP - 6256

EP - 6259

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10

ER -

Magnetoresistance of Ga_1-xMn_xAs Epitaxial Layers Doped by Be

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