Magnetotransport properties of zinc-blende-structured MnAs films with half-metallic characteristics

Hee Chang Jeon; Tae Won Kang; Sh U. Yuldashev; Tae Whan Kim; Sungho Jin

doi:10.1063/1.2353823

Magnetotransport properties of zinc-blende-structured MnAs films with half-metallic characteristics

Hee Chang Jeon, Tae Won Kang, Sh U. Yuldashev, Tae Whan Kim, Sungho Jin

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Zinc-blende-structured MnAs epitaxial films were grown on GaAs (100) substrates with InAs buffer layer. The resistivity and the Hall resistance behavior at various temperatures indicate that the MnAs thin film is half-metallic in nature. A MnAs/GaAs/MnAs spin-valve structure, fabricated utilizing half-metallic MnAs thin films, exhibited giant magnetoresistance properties. The ability to fabricate epirelated half-metallic films on semiconductor surface can facilitate construction of many spin valves and related devices for potential spintronics and magnetic memory applications.

Original language	English
Article number	112517
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2353823
State	Published - 2006

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abstract = "Zinc-blende-structured MnAs epitaxial films were grown on GaAs (100) substrates with InAs buffer layer. The resistivity and the Hall resistance behavior at various temperatures indicate that the MnAs thin film is half-metallic in nature. A MnAs/GaAs/MnAs spin-valve structure, fabricated utilizing half-metallic MnAs thin films, exhibited giant magnetoresistance properties. The ability to fabricate epirelated half-metallic films on semiconductor surface can facilitate construction of many spin valves and related devices for potential spintronics and magnetic memory applications.",

author = "Jeon, {Hee Chang} and Kang, {Tae Won} and Yuldashev, {Sh U.} and Kim, {Tae Whan} and Sungho Jin",

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journal = "Applied Physics Letters",

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AU - Kang, Tae Won

AU - Yuldashev, Sh U.

AU - Kim, Tae Whan

AU - Jin, Sungho

PY - 2006

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AB - Zinc-blende-structured MnAs epitaxial films were grown on GaAs (100) substrates with InAs buffer layer. The resistivity and the Hall resistance behavior at various temperatures indicate that the MnAs thin film is half-metallic in nature. A MnAs/GaAs/MnAs spin-valve structure, fabricated utilizing half-metallic MnAs thin films, exhibited giant magnetoresistance properties. The ability to fabricate epirelated half-metallic films on semiconductor surface can facilitate construction of many spin valves and related devices for potential spintronics and magnetic memory applications.

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JO - Applied Physics Letters

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ER -

Magnetotransport properties of zinc-blende-structured MnAs films with half-metallic characteristics

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