Memory conductance switching in a Ni-Ti-O compound thin film

Akbar I. Inamdar, Jongmin Kim, Byeonguk Jang, Duhwan Kim, Hyunsik Im, Woong Jung, Hyungsang Kim

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Nonvolatile conductance switching phenomena in a nickel-titanium oxide compound thin film were investigated for memory device applications. On/off switching ratios as high as ∼10 4 were observed. Whereas the low-resistance state (LRS) showed good retention and endurance properties, the high resistance state (HRS) showed unstable switching properties. The temperature dependence of the LRS and HRS revealed that the switching mechanism is fundamentally based on the repeated process of the electroforming and the rupture of conducting filaments. The authors suggest that relatively weaker chemical binding between the Ti and O causes the unstable electrical conduction in the HRS.

Original languageEnglish
Article number104102
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume51
Issue number10
DOIs
StatePublished - Oct 2012

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