Abstract
Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29eV (H1) and Ev+0.42eV (H2), and the capture cross sections are 4.70×10-16cm 2 and 1.44×10-15cm2, respectively. The presence of SiH and SiH2 bonds was confirmed by Fourier transform infrared spectroscopy.
Original language | English |
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Pages (from-to) | 2502-2504 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 14 |
DOIs | |
State | Published - 8 Apr 2002 |