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Memristive switching in ionic liquid–based two-terminal discrete devices

  • Mahesh Y. Chougale
  • , Swapnil R. Patil
  • , Sandeep P. Shinde
  • , Sagar S. Khot
  • , Akshay A. Patil
  • , Atul C. Khot
  • , Sourabh S. Chougule
  • , Christos K. Volos
  • , Sungjun Kim
  • , Tukaram D. Dongale
  • Shivaji University
  • Aristotle University of Thessaloniki

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

In the present work, we have developed discrete and two-terminal memristive devices using 1-butyl-3-methylimidazolium bromide [Bmim][Br] ionic liquid (IL). We have varied the mole fractions (x) of IL from 0.0001 to 1 and investigated its memristive properties. The bipolar resistive switching and frequency-dependent limiting linear characteristics are clearly observed in developed IL memristive devices. Furthermore, analog memory property indicates that the IL memristive device is a potential candidate to develop electronic synapse devices for neuromorphic computing application. It is observed that the 0.010-mol fraction-based memristive device shows good resistive switching, good memory window (ratio of HRS/LRS) (~ 36), and uniform endurance. In order to cross-check our approach, we have developed 1-ethyl-3-methylimidazolium bromide [Emim][Br] IL devices (x = 0.0001 to 1) and studied its memristive properties. Interestingly, [Emim][Br] IL devices also show the memristive-like properties similar to [Bmim][Br] IL memristive devices. The results of both IL-based devices indicate that the two-terminal structure with IL as an active element could be a possible solution to develop two-terminal discrete memristive devices. [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)5575-5583
Number of pages9
JournalIonics
Volume25
Issue number11
DOIs
StatePublished - 1 Nov 2019

Keywords

  • Ionic liquid
  • Memory
  • Memristive device
  • Resistive switching

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