TY - JOUR
T1 - Metal-doped ZnS(O) thin films on glass substrates using chemical bath deposition
AU - Inamdar, Akbar I.
AU - Lee, Seulgi
AU - Kim, Duhwan
AU - Gurav, K. V.
AU - Kim, J. H.
AU - Im, Hyunsik
AU - Jung, Woong
AU - Kim, Hyungsang
PY - 2013/6/30
Y1 - 2013/6/30
N2 - Zinc sulfide (ZnS(O)) thin films doped with Mn, Ni, and Co ions are synthesized by chemical bath deposition technique onto glass substrates. X-ray diffraction study reveals that the undoped and metal-doped ZnS(O) films possess a hexagonal wurtzite crystal structure. The morphological change, upon metal-ions doping, from nanorod structures to cluster (Mn doping), compact (Ni doping), and granular shapes (Co doping) is observed. X-ray photoelectron spectroscopy reveals the presence and incorporation of metal ions into ZnS(O) lattice sites and the formation of a metal-ZnS combined structure. The band gap energy of the undoped ZnS(O) film is found to be larger than 4.0 eV, while it is 3.8, 3.7, and 3.6 eV for the Mn-ZnS(O), Ni-ZnS(O), and Co-ZnS(O) films, respectively. All the undoped and metal-doped ZnS(O) samples exhibit blue luminescence, which originates from the surface defects and trap centers. Thus, the photoluminescence (PL) (blue light emission) is due to the radiative recombination from various trap levels (shallow donor levels) to the valence band. The decrease in the PL peak intensity for the doped samples indicates the reduction of surface defects suggesting the incorporation of metal ions into the host lattice of ZnS(O). Based on the PL results, the PL energy-level diagram for the undoped and metal-doped ZnS(O) samples is proposed.
AB - Zinc sulfide (ZnS(O)) thin films doped with Mn, Ni, and Co ions are synthesized by chemical bath deposition technique onto glass substrates. X-ray diffraction study reveals that the undoped and metal-doped ZnS(O) films possess a hexagonal wurtzite crystal structure. The morphological change, upon metal-ions doping, from nanorod structures to cluster (Mn doping), compact (Ni doping), and granular shapes (Co doping) is observed. X-ray photoelectron spectroscopy reveals the presence and incorporation of metal ions into ZnS(O) lattice sites and the formation of a metal-ZnS combined structure. The band gap energy of the undoped ZnS(O) film is found to be larger than 4.0 eV, while it is 3.8, 3.7, and 3.6 eV for the Mn-ZnS(O), Ni-ZnS(O), and Co-ZnS(O) films, respectively. All the undoped and metal-doped ZnS(O) samples exhibit blue luminescence, which originates from the surface defects and trap centers. Thus, the photoluminescence (PL) (blue light emission) is due to the radiative recombination from various trap levels (shallow donor levels) to the valence band. The decrease in the PL peak intensity for the doped samples indicates the reduction of surface defects suggesting the incorporation of metal ions into the host lattice of ZnS(O). Based on the PL results, the PL energy-level diagram for the undoped and metal-doped ZnS(O) samples is proposed.
KW - Chemical bath deposition
KW - ZnS Photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=84878295803&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2013.04.114
DO - 10.1016/j.tsf.2013.04.114
M3 - Article
AN - SCOPUS:84878295803
SN - 0040-6090
VL - 537
SP - 36
EP - 41
JO - Thin Solid Films
JF - Thin Solid Films
ER -