Metastable behavior of deep levels in hydrogenated GaAs

Hoon Young Cho, Eun Kyu Kim, Suk Ki Min, K. J. Chang, Choochon Lee

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9 Scopus citations

Abstract

New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (E c) is generated during hydrogenation and shows metastable for the Ec - 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an Ec-0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The Ec - 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with Ec - 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs.

Original languageEnglish
Pages (from-to)1866-1868
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number17
DOIs
StatePublished - 1991

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