Abstract
New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (E c) is generated during hydrogenation and shows metastable for the Ec - 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an Ec-0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The Ec - 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with Ec - 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs.
Original language | English |
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Pages (from-to) | 1866-1868 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 58 |
Issue number | 17 |
DOIs | |
State | Published - 1991 |