TY - JOUR
T1 - Method of low-temperature conversion of pehydropolysilazane into amorphous SiOx in aqueous solutions
AU - Jung, Sung Ho
AU - Lee, Jae Seo
AU - Oh, Jung Hun
AU - Moon, Sung Woon
AU - Kim, Sam Dong
PY - 2010/11
Y1 - 2010/11
N2 - We investigated low-temperature SiOx conversion methods for the spin-coated perhydropolysilazane (a diluted dibutyl-ether solution) films prepared on (100) Si substrates under different curing schemes. From the Fourier transform-infrared (FTIR) spectroscopy and refractive index (RI) measurements, conversion to high-density SiOx was observed for the curing methods of dipping the coatings into various aqueous solutions such as H 2O2, NH4OH, and deionized water with or without 405-nm ultraviolet irradiation at near room temperature. The SiOx films cured in H2O2 solution at 80 °C for 10 min exhibited a high conversion efficiency for the SiOx network, as observed from FTIR spectra, RI measurement (∼1:46), O/Si stoichiometry (∼1:5), surface smoothness (roughness < 1:1 nm), and mechanical property (nanoindenter elastic modulus ≃ 42 GPa), which are comparable to those of the conventional chemical-vapor-deposited SiOx films.
AB - We investigated low-temperature SiOx conversion methods for the spin-coated perhydropolysilazane (a diluted dibutyl-ether solution) films prepared on (100) Si substrates under different curing schemes. From the Fourier transform-infrared (FTIR) spectroscopy and refractive index (RI) measurements, conversion to high-density SiOx was observed for the curing methods of dipping the coatings into various aqueous solutions such as H 2O2, NH4OH, and deionized water with or without 405-nm ultraviolet irradiation at near room temperature. The SiOx films cured in H2O2 solution at 80 °C for 10 min exhibited a high conversion efficiency for the SiOx network, as observed from FTIR spectra, RI measurement (∼1:46), O/Si stoichiometry (∼1:5), surface smoothness (roughness < 1:1 nm), and mechanical property (nanoindenter elastic modulus ≃ 42 GPa), which are comparable to those of the conventional chemical-vapor-deposited SiOx films.
UR - http://www.scopus.com/inward/record.url?scp=79551636115&partnerID=8YFLogxK
U2 - 10.1143/JJAP.49.111505
DO - 10.1143/JJAP.49.111505
M3 - Article
AN - SCOPUS:79551636115
SN - 0021-4922
VL - 49
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 11
M1 - 111505
ER -