Abstract
Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.
Original language | English |
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Pages (from-to) | 9542-9547 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 12 |
DOIs | |
State | Published - 15 Jun 2003 |