Microstructural and magnetic properties of zinc-blende MnAs films with half metallic characteristics grown on GaAs (100) substrates

Tae Whan Kim; Hee Chang Jeon; Tae Won Kang; Ho Seong Lee; Jeong Yong Lee; Sungho Jin

doi:10.1063/1.2162861

Microstructural and magnetic properties of zinc-blende MnAs films with half metallic characteristics grown on GaAs (100) substrates

Tae Whan Kim
, Hee Chang Jeon
, Tae Won Kang
, Ho Seong Lee
, Jeong Yong Lee
, Sungho Jin

Hanyang University
Dongguk University
Kyungpook National University
Korea Advanced Institute of Science and Technology
University of California at San Diego

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

Zinc-blende structured MnAs epiaxial films with half metallic characteristics were grown on GaAs (100) substrates. The formation of the zinc-blende structured MnAs on GaAs was made possible via introduction of a strained yet epirelated InAs intermediate layer, the thickness of which was found critical for enabling the half metallic structure. The magnetization curves as functions of the magnetic fields showed magnetic hysteresis and isotropic ferromagnetic properties. The magnetoresistance behavior at various temperatures indicates that the MnAs thin film is half-metallic in nature.

Original language	English
Article number	021915
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	2
DOIs	https://doi.org/10.1063/1.2162861
State	Published - 2006

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10.1063/1.2162861

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title = "Microstructural and magnetic properties of zinc-blende MnAs films with half metallic characteristics grown on GaAs (100) substrates",

abstract = "Zinc-blende structured MnAs epiaxial films with half metallic characteristics were grown on GaAs (100) substrates. The formation of the zinc-blende structured MnAs on GaAs was made possible via introduction of a strained yet epirelated InAs intermediate layer, the thickness of which was found critical for enabling the half metallic structure. The magnetization curves as functions of the magnetic fields showed magnetic hysteresis and isotropic ferromagnetic properties. The magnetoresistance behavior at various temperatures indicates that the MnAs thin film is half-metallic in nature.",

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doi = "10.1063/1.2162861",

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T1 - Microstructural and magnetic properties of zinc-blende MnAs films with half metallic characteristics grown on GaAs (100) substrates

AU - Kim, Tae Whan

AU - Jeon, Hee Chang

AU - Kang, Tae Won

AU - Lee, Ho Seong

AU - Lee, Jeong Yong

AU - Jin, Sungho

PY - 2006

Y1 - 2006

N2 - Zinc-blende structured MnAs epiaxial films with half metallic characteristics were grown on GaAs (100) substrates. The formation of the zinc-blende structured MnAs on GaAs was made possible via introduction of a strained yet epirelated InAs intermediate layer, the thickness of which was found critical for enabling the half metallic structure. The magnetization curves as functions of the magnetic fields showed magnetic hysteresis and isotropic ferromagnetic properties. The magnetoresistance behavior at various temperatures indicates that the MnAs thin film is half-metallic in nature.

AB - Zinc-blende structured MnAs epiaxial films with half metallic characteristics were grown on GaAs (100) substrates. The formation of the zinc-blende structured MnAs on GaAs was made possible via introduction of a strained yet epirelated InAs intermediate layer, the thickness of which was found critical for enabling the half metallic structure. The magnetization curves as functions of the magnetic fields showed magnetic hysteresis and isotropic ferromagnetic properties. The magnetoresistance behavior at various temperatures indicates that the MnAs thin film is half-metallic in nature.

UR - https://www.scopus.com/pages/publications/30844439659

U2 - 10.1063/1.2162861

DO - 10.1063/1.2162861

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

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ER -

Microstructural and magnetic properties of zinc-blende MnAs films with half metallic characteristics grown on GaAs (100) substrates

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