Millimeter-wave small-signal model using a coplanar waveguide de-embedded sub-model for HEMT

Tung The Lam Nguyen; Sam Dong Kim

doi:10.1109/LMWC.2013.2290214

Millimeter-wave small-signal model using a coplanar waveguide de-embedded sub-model for HEMT

Tung The Lam Nguyen, Sam Dong Kim

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We propose in this study an approach to highly reliable extraction method for parasitic elements of the 0.1 μm GaAs metamorphic high electron mobility transistors. This method utilizes the de-embedding scheme for the coplanar waveguide (CPW) feeding structure by considering the distributed extrinsic parasitic elements in our small-signal model. The parasitic extrinsic capacitances are determined by modeling a PI equivalent circuit including the interaction between the sub-model (the model after de-embedding) and the CPW feedings. Extractions for the parasitic elements are performed at four different gate widths, and our S-parameter prediction shows the best agreement with the measurements in a frequency range of 0.5-110 GHz (0.5 GHz step) among the small-signal models reported to date.

Original language	English
Article number	6680704
Pages (from-to)	99-101
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	24
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2013.2290214
State	Published - Feb 2014

Keywords

Field effect transistors (FETs)
linear and non-linear device modeling
microwave device characterization and measurements

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10.1109/LMWC.2013.2290214

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title = "Millimeter-wave small-signal model using a coplanar waveguide de-embedded sub-model for HEMT",

abstract = "We propose in this study an approach to highly reliable extraction method for parasitic elements of the 0.1 μm GaAs metamorphic high electron mobility transistors. This method utilizes the de-embedding scheme for the coplanar waveguide (CPW) feeding structure by considering the distributed extrinsic parasitic elements in our small-signal model. The parasitic extrinsic capacitances are determined by modeling a PI equivalent circuit including the interaction between the sub-model (the model after de-embedding) and the CPW feedings. Extractions for the parasitic elements are performed at four different gate widths, and our S-parameter prediction shows the best agreement with the measurements in a frequency range of 0.5-110 GHz (0.5 GHz step) among the small-signal models reported to date.",

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AU - Kim, Sam Dong

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AB - We propose in this study an approach to highly reliable extraction method for parasitic elements of the 0.1 μm GaAs metamorphic high electron mobility transistors. This method utilizes the de-embedding scheme for the coplanar waveguide (CPW) feeding structure by considering the distributed extrinsic parasitic elements in our small-signal model. The parasitic extrinsic capacitances are determined by modeling a PI equivalent circuit including the interaction between the sub-model (the model after de-embedding) and the CPW feedings. Extractions for the parasitic elements are performed at four different gate widths, and our S-parameter prediction shows the best agreement with the measurements in a frequency range of 0.5-110 GHz (0.5 GHz step) among the small-signal models reported to date.

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Millimeter-wave small-signal model using a coplanar waveguide de-embedded sub-model for HEMT

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