Abstract
In this paper, we present a simple and reliable technique for determining the small-signal equivalent circuit model parameters of the 0.1 μm metamorphic high electron mobility transistors (MHEMTs) in a millimeter-wave frequency range. The initial eight extrinsic parameters of the MHEMT are extracted using two S-parameter (scattering parameter) sets measured under the pinched-off and zero-biased cold field-effect transistor conditions by avoiding the forward gate biasing. Furthermore, highly calibration-sensitive values of the Rs, Ls and Cpd are optimized by using a gradient optimization method to improve the modeling accuracy. The accuracy enhancement of this procedure is successfully verified with an excellent correlation between the measured and calculated S-parameters up to 65 GHz.
Original language | English |
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Article number | 085002 |
Journal | Semiconductor Science and Technology |
Volume | 25 |
Issue number | 8 |
DOIs | |
State | Published - 2 Aug 2010 |