Model for the leakage current decay in high-field stressed Al/HfYO x/GaAs structures

E. Miranda; C. Mahata; T. Das; C. K. Maiti

doi:10.1016/j.mee.2011.03.139

Model for the leakage current decay in high-field stressed Al/HfYO _x/GaAs structures

E. Miranda, C. Mahata, T. Das, C. K. Maiti

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A simple model for the leakage current decay in Al/HfYO_x/GaAs structures subjected to constant voltage stress is presented. The model is based on a circuit representation of the so-called Curie-von Schweidler (CS) law for dielectric degradation that can be easily extended to other metal-insulator- semiconductor (MIS) structures exhibiting similar behavior. By means of the inclusion of effective series and parallel resistances the proposed approach allows to eliminate the singularities of the CS law at t = 0 and t = ∞ so that the final result corresponds to a power-law logistic current-time characteristic.

Original language	English
Pages (from-to)	1295-1297
Number of pages	3
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.139
State	Published - Jul 2011

Keywords

Curie-von Schweidler law
MIS
Oxide degradation

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10.1016/j.mee.2011.03.139

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abstract = "A simple model for the leakage current decay in Al/HfYOx/GaAs structures subjected to constant voltage stress is presented. The model is based on a circuit representation of the so-called Curie-von Schweidler (CS) law for dielectric degradation that can be easily extended to other metal-insulator- semiconductor (MIS) structures exhibiting similar behavior. By means of the inclusion of effective series and parallel resistances the proposed approach allows to eliminate the singularities of the CS law at t = 0 and t = ∞ so that the final result corresponds to a power-law logistic current-time characteristic.",

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AU - Miranda, E.

AU - Mahata, C.

AU - Das, T.

AU - Maiti, C. K.

PY - 2011/7

Y1 - 2011/7

N2 - A simple model for the leakage current decay in Al/HfYOx/GaAs structures subjected to constant voltage stress is presented. The model is based on a circuit representation of the so-called Curie-von Schweidler (CS) law for dielectric degradation that can be easily extended to other metal-insulator- semiconductor (MIS) structures exhibiting similar behavior. By means of the inclusion of effective series and parallel resistances the proposed approach allows to eliminate the singularities of the CS law at t = 0 and t = ∞ so that the final result corresponds to a power-law logistic current-time characteristic.

AB - A simple model for the leakage current decay in Al/HfYOx/GaAs structures subjected to constant voltage stress is presented. The model is based on a circuit representation of the so-called Curie-von Schweidler (CS) law for dielectric degradation that can be easily extended to other metal-insulator- semiconductor (MIS) structures exhibiting similar behavior. By means of the inclusion of effective series and parallel resistances the proposed approach allows to eliminate the singularities of the CS law at t = 0 and t = ∞ so that the final result corresponds to a power-law logistic current-time characteristic.

KW - Curie-von Schweidler law

KW - MIS

KW - Oxide degradation

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EP - 1297

JO - Microelectronic Engineering

JF - Microelectronic Engineering

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ER -

Model for the leakage current decay in high-field stressed Al/HfYO _x/GaAs structures

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Keywords

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