TY - JOUR
T1 - Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect Transistors
AU - Kim, Donguk
AU - Lee, Dayeon
AU - Kim, Wonjung
AU - Lee, Ho Jung
AU - Kim, Changwook
AU - Lee, Kwang Hee
AU - Jung, Moonil
AU - Yang, Jee Eun
AU - Jang, Younjin
AU - Kim, Sungjun
AU - Kim, Sangwook
AU - Kim, Dae Hwan
N1 - Publisher Copyright:
© 2025 American Chemical Society.
PY - 2025/1/29
Y1 - 2025/1/29
N2 - In this study, we analyze the characteristics of fast transient drain current (ID) in IGZO-based field-effect transistors (FETs) with different composition ratios (device O: ratio of 1:1:1 for In, Ga, Zn, device G: ratio of 0.307:0.39:0.303) for reliable operations. Overshoot currents, which can cause device degradation, are caused by fast transients and are attributed to the trapping of electrons in the energy band. As the lateral electric field (Elat) of the IGZO channel is increased, the overshoot drain current difference (ΔIOS) is increased for both devices. It is also found that the increase in ΔIOS with decreasing L is less pronounced in device G compared with that for device O. While device G yields larger ΔIOS values than device O in long channels (L = 5, 10 μm), it yields smaller ΔIOS in short channels (L = 0.5, 1 μm). This phenomenon is explained using three physical parameters (nOS, Ever, and NOT), based on Technology Computer-Aided Design (TCAD) simulation modeling. Device G has stronger immunity against ΔIOS in a short-channel region; this can be attributed to the lower concentration of oxygen vacancies in device G that suppresses dopant diffusion effects within IGZO layer. These results experimentally demonstrate that the short-channel effects on fast-transient ID can be improved by controlling the Ga composition ratio of IGZO.
AB - In this study, we analyze the characteristics of fast transient drain current (ID) in IGZO-based field-effect transistors (FETs) with different composition ratios (device O: ratio of 1:1:1 for In, Ga, Zn, device G: ratio of 0.307:0.39:0.303) for reliable operations. Overshoot currents, which can cause device degradation, are caused by fast transients and are attributed to the trapping of electrons in the energy band. As the lateral electric field (Elat) of the IGZO channel is increased, the overshoot drain current difference (ΔIOS) is increased for both devices. It is also found that the increase in ΔIOS with decreasing L is less pronounced in device G compared with that for device O. While device G yields larger ΔIOS values than device O in long channels (L = 5, 10 μm), it yields smaller ΔIOS in short channels (L = 0.5, 1 μm). This phenomenon is explained using three physical parameters (nOS, Ever, and NOT), based on Technology Computer-Aided Design (TCAD) simulation modeling. Device G has stronger immunity against ΔIOS in a short-channel region; this can be attributed to the lower concentration of oxygen vacancies in device G that suppresses dopant diffusion effects within IGZO layer. These results experimentally demonstrate that the short-channel effects on fast-transient ID can be improved by controlling the Ga composition ratio of IGZO.
KW - amorphous InGaZnO
KW - cation composition ratio
KW - channel length
KW - fast-transient drain currents
KW - field-effect transistors
KW - oxide semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85215628911&partnerID=8YFLogxK
U2 - 10.1021/acsami.4c17007
DO - 10.1021/acsami.4c17007
M3 - Article
C2 - 39817349
AN - SCOPUS:85215628911
SN - 1944-8244
VL - 17
SP - 6513
EP - 6520
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 4
ER -