Modulation of electrical mobility in Au ion irradiated titanium oxide with crystal field splitting

Hyun Woo Park; Byung Hyuk Jun; Dukhyun Choi; Kwun Bum Chung

doi:10.7567/JJAP.55.115701

Modulation of electrical mobility in Au ion irradiated titanium oxide with crystal field splitting

Hyun Woo Park, Byung Hyuk Jun, Dukhyun Choi, Kwun Bum Chung

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Electrical modulation of radio frequency (RF) sputtered TiO_2-x films were investigated as a function of Au swift heavy ion irradiation dose at room temperature. The prepared TiO_2-x films were irradiated with 130 MeV Au swift heavy ion in the range from 1 × 10¹¹ to 5 × 10¹² ions/cm². As the Au ion irradiation dose increased up to 1 × 10¹² ions/cm², the electrical mobility of TiO_2-x films were dramatically increased 3.07 × 10² cm² V^-1 s^-1 without the change of carrier concentration. These changes in electrical properties of Au irradiated TiO_2-x film, are related to the modification of electronic structure such as crystal field splitting of Ti 3d orbital hybridization and sub-band edge states below the conduction band as a function of Au swift heavy ion irradiation dose.

Original language	English
Article number	115701
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	55
Issue number	11
DOIs	https://doi.org/10.7567/JJAP.55.115701
State	Published - Nov 2016

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@article{d8ddd25b89634823adf78c43b7e0b9cf,

title = "Modulation of electrical mobility in Au ion irradiated titanium oxide with crystal field splitting",

abstract = "Electrical modulation of radio frequency (RF) sputtered TiO2-x films were investigated as a function of Au swift heavy ion irradiation dose at room temperature. The prepared TiO2-x films were irradiated with 130 MeV Au swift heavy ion in the range from 1 × 1011 to 5 × 1012 ions/cm2. As the Au ion irradiation dose increased up to 1 × 1012 ions/cm2, the electrical mobility of TiO2-x films were dramatically increased 3.07 × 102 cm2 V-1 s-1 without the change of carrier concentration. These changes in electrical properties of Au irradiated TiO2-x film, are related to the modification of electronic structure such as crystal field splitting of Ti 3d orbital hybridization and sub-band edge states below the conduction band as a function of Au swift heavy ion irradiation dose.",

author = "Park, {Hyun Woo} and Jun, {Byung Hyuk} and Dukhyun Choi and Chung, {Kwun Bum}",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = nov,

doi = "10.7567/JJAP.55.115701",

language = "English",

volume = "55",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11",

}

TY - JOUR

T1 - Modulation of electrical mobility in Au ion irradiated titanium oxide with crystal field splitting

AU - Park, Hyun Woo

AU - Jun, Byung Hyuk

AU - Choi, Dukhyun

AU - Chung, Kwun Bum

PY - 2016/11

Y1 - 2016/11

N2 - Electrical modulation of radio frequency (RF) sputtered TiO2-x films were investigated as a function of Au swift heavy ion irradiation dose at room temperature. The prepared TiO2-x films were irradiated with 130 MeV Au swift heavy ion in the range from 1 × 1011 to 5 × 1012 ions/cm2. As the Au ion irradiation dose increased up to 1 × 1012 ions/cm2, the electrical mobility of TiO2-x films were dramatically increased 3.07 × 102 cm2 V-1 s-1 without the change of carrier concentration. These changes in electrical properties of Au irradiated TiO2-x film, are related to the modification of electronic structure such as crystal field splitting of Ti 3d orbital hybridization and sub-band edge states below the conduction band as a function of Au swift heavy ion irradiation dose.

AB - Electrical modulation of radio frequency (RF) sputtered TiO2-x films were investigated as a function of Au swift heavy ion irradiation dose at room temperature. The prepared TiO2-x films were irradiated with 130 MeV Au swift heavy ion in the range from 1 × 1011 to 5 × 1012 ions/cm2. As the Au ion irradiation dose increased up to 1 × 1012 ions/cm2, the electrical mobility of TiO2-x films were dramatically increased 3.07 × 102 cm2 V-1 s-1 without the change of carrier concentration. These changes in electrical properties of Au irradiated TiO2-x film, are related to the modification of electronic structure such as crystal field splitting of Ti 3d orbital hybridization and sub-band edge states below the conduction band as a function of Au swift heavy ion irradiation dose.

UR - http://www.scopus.com/inward/record.url?scp=84994713377&partnerID=8YFLogxK

U2 - 10.7567/JJAP.55.115701

DO - 10.7567/JJAP.55.115701

M3 - Article

AN - SCOPUS:84994713377

SN - 0021-4922

VL - 55

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 11

M1 - 115701

ER -

Modulation of electrical mobility in Au ion irradiated titanium oxide with crystal field splitting

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