Modulation of Junction Modes in SnSe2/MoTe2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices

Juchan Lee, Ngoc Thanh Duong, Seungho Bang, Chulho Park, Duc Anh Nguyen, Hobeom Jeon, Jiseong Jang, Hye Min Oh, Mun Seok Jeong

Research output: Contribution to journalArticlepeer-review

82 Scopus citations

Abstract

We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe2 and MoTe2 with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 × 1012 Jones. In addition, to harness the electrostatic gate bias, Voc can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high-performance multifunctional optoelectronics based on the SnSe2/MoTe2 heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.

Original languageEnglish
Pages (from-to)2370-2377
Number of pages8
JournalNano Letters
Volume20
Issue number4
DOIs
StatePublished - 8 Apr 2020

Keywords

  • broken-gap band alignment
  • infrared photodetector
  • photovoltaic effect
  • transition-metal dichalcogenides
  • tunnel diode
  • van der Waals heterostructure

Fingerprint

Dive into the research topics of 'Modulation of Junction Modes in SnSe2/MoTe2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices'. Together they form a unique fingerprint.

Cite this