Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition

Xiao Fu, Lei Zhang, Hak D. Cho, Tae Won Kang, Dejun Fu, Dongjin Lee, Sang Wuk Lee, Luying Li, Tianyu Qi, Abdul S. Chan, Ziyodbek A. Yunusov, Gennady N. Panin

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

MoS2 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low-dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS2 structure providing dynamic resistive memory is reported. The resistive switching of the MoS2 NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS2 2H-1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real-time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs.

Original languageEnglish
Article number1903809
JournalSmall
Volume15
Issue number45
DOIs
StatePublished - 1 Nov 2019

Keywords

  • 2D crystals and QDs
  • dynamic photomemristors
  • liquid phase exfoliation
  • neuromorphic computing
  • photoinduced phase transition

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