Monoclinic textured HfO2 films on GeOx Ny /Ge (100) stacks using interface reconstruction by controlled thermal processing

Karen Paz Bastos, Leonardo Miotti, Gerald Lucovsky, Kwun Bum Chung, Dennis Nordlund

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The authors used x-ray absorption spectroscopy of the O K edge to investigate the nanocrystalline structure of thin HfO2 films deposited by remote plasma enhanced chemical vapor deposition on Ge(100). Postdeposition thermal process induced the interfacial reconstruction and the crystallization of the HfO2 in the monoclinic structure driven by the Ge(100) substrate. The substrate templating of the HfO2 crystallization is an evidence that the processing used here removes the undesired the interfacial layer and has the potential to yield interfaces with low density of defects.

Original languageEnglish
Pages (from-to)662-664
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume28
Issue number4
DOIs
StatePublished - Jul 2010

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