Monolithic 3D integration with 2D materials

Sangmoon Han; Ji Yun Moon; Sang Hoon Bae

doi:10.1038/s41928-024-01260-7

Monolithic 3D integration with 2D materials

Sangmoon Han
, Ji Yun Moon
, Sang Hoon Bae

Department of Electronics & Electrical Engineering

Washington University St. Louis

Research output: Contribution to journal › Comment/debate

7 Scopus citations

Abstract

The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.

Original language	English
Pages (from-to)	854-855
Number of pages	2
Journal	Nature Electronics
Volume	7
Issue number	10
DOIs	https://doi.org/10.1038/s41928-024-01260-7
State	Published - Oct 2024

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title = "Monolithic 3D integration with 2D materials",

abstract = "The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.",

author = "Sangmoon Han and Moon, \{Ji Yun\} and Bae, \{Sang Hoon\}",

note = "Publisher Copyright: {\textcopyright} Springer Nature Limited 2024.",

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doi = "10.1038/s41928-024-01260-7",

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T1 - Monolithic 3D integration with 2D materials

AU - Han, Sangmoon

AU - Moon, Ji Yun

AU - Bae, Sang Hoon

N1 - Publisher Copyright: © Springer Nature Limited 2024.

PY - 2024/10

Y1 - 2024/10

N2 - The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.

AB - The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.

UR - https://www.scopus.com/pages/publications/85205882679

U2 - 10.1038/s41928-024-01260-7

DO - 10.1038/s41928-024-01260-7

M3 - Comment/debate

AN - SCOPUS:85205882679

SN - 2520-1131

VL - 7

SP - 854

EP - 855

JO - Nature Electronics

JF - Nature Electronics

IS - 10

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Monolithic 3D integration with 2D materials

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