Monolithically patterned high mobility solution-processed metal-oxide TFTs with metallic capping layers

Kyung Tae Kim, Jae Hyun Kim, Il Wan Jang, Chan Ho Jo, Jaekyun Kim, Yong Hoon Kim, Sung Kyu Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Amorphous indium gallium zinc oxide(IGZO) based thin film transistors(TFTs) have been widely studied due to their good electrical properties such as optical transparent and field effect mobility. The demand for low-cost process of thin film devices has needed solution processed metal oxide TFTs. Although many effective ways of fabricating soluble metal oxide TFTs have been investigated1, there is still the necessity of increasing field effect mobility of TFTs. As a one way of mobility improvement, low work function metals(Ca, Ti) were used as passivation in terms of capping layer on top of the IGZO active layer2,3. The metal capping method has obvious several advantages, but we expect the additional process cost due to a step of patterning the capping layer. Also, because nature of metals has no transparent characteristics, this pure metal capping method could not available in transparent applications. In this paper, we suggest a real time deposition method of electrodes and capping layer for solution processed IGZO TFTs with maintaining transparency and process cost.

Original languageEnglish
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages137-138
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: 22 Jun 201425 Jun 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference72nd Device Research Conference, DRC 2014
Country/TerritoryUnited States
CitySanta Barbara, CA
Period22/06/1425/06/14

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