Morphological evolution of silicon nanowires grown by chemical vapor deposition

Dongwook Kwak, Daehoon Kim, Hoonyoung Cho, Woochul Yang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Morphological evolution of Si nanowires (Si-NWs) grown on Si (001) substrates is explored. The Si-NWs are fabricated by nanoscale Au-Si island-catalyzed rapid thermal chemical vapor deposition. The Au-Si islands (10-50 nm in dia.) are formed by deposition of Au thin film (1.2-3.0 nm) at room temperature and followed by annealing at 700°C The Si-NWs are grown by exposure them to a mixture of gasses of SiH4 and H2. We found a critical thickness of the Au film for Si-NW nucleation at a given growth condition. Also, we observed variation in the growth rate and the dimension of the NWs depending on the growth pressure and temperature. The resulting NWs are ∼30-100nm in diameter and ∼0.4-5.0μm in length. Most of the NWs were aligned along the <111> direction. The morphological and dimensional evolution of the Si-NWs is discussed in terms of kinetics (atomic diffusion mechanism) and energetics (surface and interface energies).

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd
Pages1201-1204
Number of pages4
EditionPART 2
ISBN (Print)3908451310, 9783908451310
DOIs
StatePublished - 2007
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 10 Sep 200614 Sep 2006

Publication series

NameSolid State Phenomena
NumberPART 2
Volume124-126
ISSN (Print)1012-0394

Conference

ConferenceIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/TerritoryKorea, Republic of
CityJeju
Period10/09/0614/09/06

Keywords

  • Au-Si alloy droplets
  • Chemical vapor deposition
  • Si-nanowires(Si-NWs)
  • VLS

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