TY - GEN
T1 - Morphological evolution of silicon nanowires grown by chemical vapor deposition
AU - Kwak, Dongwook
AU - Kim, Daehoon
AU - Cho, Hoonyoung
AU - Yang, Woochul
PY - 2007
Y1 - 2007
N2 - Morphological evolution of Si nanowires (Si-NWs) grown on Si (001) substrates is explored. The Si-NWs are fabricated by nanoscale Au-Si island-catalyzed rapid thermal chemical vapor deposition. The Au-Si islands (10-50 nm in dia.) are formed by deposition of Au thin film (1.2-3.0 nm) at room temperature and followed by annealing at 700°C The Si-NWs are grown by exposure them to a mixture of gasses of SiH4 and H2. We found a critical thickness of the Au film for Si-NW nucleation at a given growth condition. Also, we observed variation in the growth rate and the dimension of the NWs depending on the growth pressure and temperature. The resulting NWs are ∼30-100nm in diameter and ∼0.4-5.0μm in length. Most of the NWs were aligned along the <111> direction. The morphological and dimensional evolution of the Si-NWs is discussed in terms of kinetics (atomic diffusion mechanism) and energetics (surface and interface energies).
AB - Morphological evolution of Si nanowires (Si-NWs) grown on Si (001) substrates is explored. The Si-NWs are fabricated by nanoscale Au-Si island-catalyzed rapid thermal chemical vapor deposition. The Au-Si islands (10-50 nm in dia.) are formed by deposition of Au thin film (1.2-3.0 nm) at room temperature and followed by annealing at 700°C The Si-NWs are grown by exposure them to a mixture of gasses of SiH4 and H2. We found a critical thickness of the Au film for Si-NW nucleation at a given growth condition. Also, we observed variation in the growth rate and the dimension of the NWs depending on the growth pressure and temperature. The resulting NWs are ∼30-100nm in diameter and ∼0.4-5.0μm in length. Most of the NWs were aligned along the <111> direction. The morphological and dimensional evolution of the Si-NWs is discussed in terms of kinetics (atomic diffusion mechanism) and energetics (surface and interface energies).
KW - Au-Si alloy droplets
KW - Chemical vapor deposition
KW - Si-nanowires(Si-NWs)
KW - VLS
UR - http://www.scopus.com/inward/record.url?scp=38549122548&partnerID=8YFLogxK
U2 - 10.4028/3-908451-31-0.1201
DO - 10.4028/3-908451-31-0.1201
M3 - Conference contribution
AN - SCOPUS:38549122548
SN - 3908451310
SN - 9783908451310
T3 - Solid State Phenomena
SP - 1201
EP - 1204
BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PB - Trans Tech Publications Ltd
T2 - IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Y2 - 10 September 2006 through 14 September 2006
ER -