MoS2:PVA-Based Flexible Optoelectronic Reconfigurable Memristor for Neuromorphic Computing

Harsh Ranjan; Parthasarathi Pal; Vivek Pratap Singh; Gulshan Kumar; Sanjay Kumar; Saurabh Kumar Pandey

doi:10.1109/LED.2026.3699740

MoS₂:PVA-Based Flexible Optoelectronic Reconfigurable Memristor for Neuromorphic Computing

Harsh Ranjan
, Parthasarathi Pal
, Vivek Pratap Singh
, Gulshan Kumar
, Sanjay Kumar
, Saurabh Kumar Pandey

Department of Advanced Battery Convergence Engineering

Indian Institute of Technology Patna

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This letter presents a flexible Ag/MoS₂: PVA/SiO₂/Pt memristor featuring controllable transition between volatile self-rectifying threshold switching (SRTS) and non-volatile bipolar resistive switching dependent on compliance current (CC) and operating voltage. The device exhibits a high rectification ratio (∼ 10³) and ultrafast relaxation (~170 ns) time in SRTS mode, functioning as an effective selector. In non-volatile mode, it exhibits stable multi-level storage and persistence photoconductivity (PPC) under a red light source, enabling optoelectronic synaptic emulation. Integrated NeurosimV 3.0 hardware simulation reveals weight updates (NL_P/D ≈4.21/-4. 86) functionality and achieves 85% MNIST handwritten dataset classification accuracy. These results provide a robust, single-layer optoelectronic memristive hardware platform for integrated sensing, cell selection, and neuromorphic computing in flexible electronics.

Original language	English
Pages (from-to)	1583-1586
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	47
Issue number	8
DOIs	https://doi.org/10.1109/LED.2026.3699740
State	Published - 1 Aug 2026

Keywords

2D materials
MoS
memristor
neuromorphic computing
optoelectronic synapses
threshold switching

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10.1109/LED.2026.3699740

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title = "MoS2:PVA-Based Flexible Optoelectronic Reconfigurable Memristor for Neuromorphic Computing",

abstract = "This letter presents a flexible Ag/MoS2: PVA/SiO2/Pt memristor featuring controllable transition between volatile self-rectifying threshold switching (SRTS) and non-volatile bipolar resistive switching dependent on compliance current (CC) and operating voltage. The device exhibits a high rectification ratio (∼ 103) and ultrafast relaxation (\textasciitilde{}170 ns) time in SRTS mode, functioning as an effective selector. In non-volatile mode, it exhibits stable multi-level storage and persistence photoconductivity (PPC) under a red light source, enabling optoelectronic synaptic emulation. Integrated NeurosimV 3.0 hardware simulation reveals weight updates (NLP/D ≈4.21/-4. 86) functionality and achieves 85\% MNIST handwritten dataset classification accuracy. These results provide a robust, single-layer optoelectronic memristive hardware platform for integrated sensing, cell selection, and neuromorphic computing in flexible electronics.",

keywords = "2D materials, MoS, memristor, neuromorphic computing, optoelectronic synapses, threshold switching",

author = "Harsh Ranjan and Parthasarathi Pal and Singh, \{Vivek Pratap\} and Gulshan Kumar and Sanjay Kumar and Pandey, \{Saurabh Kumar\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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doi = "10.1109/LED.2026.3699740",

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AU - Ranjan, Harsh

AU - Pal, Parthasarathi

AU - Singh, Vivek Pratap

AU - Kumar, Gulshan

AU - Kumar, Sanjay

AU - Pandey, Saurabh Kumar

PY - 2026/8/1

Y1 - 2026/8/1

N2 - This letter presents a flexible Ag/MoS2: PVA/SiO2/Pt memristor featuring controllable transition between volatile self-rectifying threshold switching (SRTS) and non-volatile bipolar resistive switching dependent on compliance current (CC) and operating voltage. The device exhibits a high rectification ratio (∼ 103) and ultrafast relaxation (~170 ns) time in SRTS mode, functioning as an effective selector. In non-volatile mode, it exhibits stable multi-level storage and persistence photoconductivity (PPC) under a red light source, enabling optoelectronic synaptic emulation. Integrated NeurosimV 3.0 hardware simulation reveals weight updates (NLP/D ≈4.21/-4. 86) functionality and achieves 85% MNIST handwritten dataset classification accuracy. These results provide a robust, single-layer optoelectronic memristive hardware platform for integrated sensing, cell selection, and neuromorphic computing in flexible electronics.

AB - This letter presents a flexible Ag/MoS2: PVA/SiO2/Pt memristor featuring controllable transition between volatile self-rectifying threshold switching (SRTS) and non-volatile bipolar resistive switching dependent on compliance current (CC) and operating voltage. The device exhibits a high rectification ratio (∼ 103) and ultrafast relaxation (~170 ns) time in SRTS mode, functioning as an effective selector. In non-volatile mode, it exhibits stable multi-level storage and persistence photoconductivity (PPC) under a red light source, enabling optoelectronic synaptic emulation. Integrated NeurosimV 3.0 hardware simulation reveals weight updates (NLP/D ≈4.21/-4. 86) functionality and achieves 85% MNIST handwritten dataset classification accuracy. These results provide a robust, single-layer optoelectronic memristive hardware platform for integrated sensing, cell selection, and neuromorphic computing in flexible electronics.

KW - 2D materials

KW - MoS

KW - memristor

KW - neuromorphic computing

KW - optoelectronic synapses

KW - threshold switching

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

MoS₂:PVA-Based Flexible Optoelectronic Reconfigurable Memristor for Neuromorphic Computing

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Keywords

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