@inproceedings{311b3bf2b43f425f805f7978205f4e08,
title = "Multi-level resistive switching in HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode",
abstract = "RRAM with multilevel resistance states of HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode is presented. Trilayer structure proves to be promising for multilevel memory state under DC voltage condition. Under different SET current compliance and RESET voltage the memristor device shows reliable multi-level resistive switching characteristics.",
keywords = "ITO, Miltilevel resistance, RRAM, Trilayered dielectric film",
author = "Chandreswar Mahata and Sungjun Kim",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 International Conference on Electronics, Information, and Communication, ICEIC 2020 ; Conference date: 19-01-2020 Through 22-01-2020",
year = "2020",
month = jan,
doi = "10.1109/ICEIC49074.2020.9051025",
language = "English",
series = "2020 International Conference on Electronics, Information, and Communication, ICEIC 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 International Conference on Electronics, Information, and Communication, ICEIC 2020",
address = "United States",
}