Multi-level resistive switching in HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode

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4 Scopus citations

Abstract

RRAM with multilevel resistance states of HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode is presented. Trilayer structure proves to be promising for multilevel memory state under DC voltage condition. Under different SET current compliance and RESET voltage the memristor device shows reliable multi-level resistive switching characteristics.

Original languageEnglish
Title of host publication2020 International Conference on Electronics, Information, and Communication, ICEIC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728162898
DOIs
StatePublished - Jan 2020
Event2020 International Conference on Electronics, Information, and Communication, ICEIC 2020 - Barcelona, Spain
Duration: 19 Jan 202022 Jan 2020

Publication series

Name2020 International Conference on Electronics, Information, and Communication, ICEIC 2020

Conference

Conference2020 International Conference on Electronics, Information, and Communication, ICEIC 2020
Country/TerritorySpain
CityBarcelona
Period19/01/2022/01/20

Keywords

  • ITO
  • Miltilevel resistance
  • RRAM
  • Trilayered dielectric film

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