TY - JOUR
T1 - Nano-structured CuO on Silicon Using a Chemical Bath Deposition Process and Sputter Seed Layer
AU - Bandaru, Shamili
AU - Mahata, Chandreswar
AU - Chakrabortty, Sabyasachi
AU - Ghosh, Siddhartha
AU - Algadi, Hassan
AU - Ramakrishna, Seeram
AU - Dalapati, Goutam Kumar
N1 - Publisher Copyright:
© 2021, The Minerals, Metals & Materials Society.
PY - 2021/4
Y1 - 2021/4
N2 - Morphological changes of copper oxide (CuO) nano-structures have been studied in detail for renewable energy and electronic applications. The CuO nano-structures were grown on a silicon substrate via a two-stage process starting with radio frequency sputtering for the seed layer followed by chemical bath deposition. The study was focused on controlling the shape and size of the CuO nano-structures depending on various growth conditions, such as reaction time, growth temperature, and vertical/horizontal orientation of the substrate containing the sputtered-grown seed layer. Structural, optical, crystallographic, and morphological characteristics of the nano-structures were obtained through field-emission scanning electron microscopy, x-ray diffraction crystallographic analysis, and UV–Vis spectroscopy.
AB - Morphological changes of copper oxide (CuO) nano-structures have been studied in detail for renewable energy and electronic applications. The CuO nano-structures were grown on a silicon substrate via a two-stage process starting with radio frequency sputtering for the seed layer followed by chemical bath deposition. The study was focused on controlling the shape and size of the CuO nano-structures depending on various growth conditions, such as reaction time, growth temperature, and vertical/horizontal orientation of the substrate containing the sputtered-grown seed layer. Structural, optical, crystallographic, and morphological characteristics of the nano-structures were obtained through field-emission scanning electron microscopy, x-ray diffraction crystallographic analysis, and UV–Vis spectroscopy.
KW - Nano-structures
KW - copper oxide
KW - growth temperature
KW - silicon substrate
KW - sputtering seed layer
UR - http://www.scopus.com/inward/record.url?scp=85101057801&partnerID=8YFLogxK
U2 - 10.1007/s11664-021-08772-4
DO - 10.1007/s11664-021-08772-4
M3 - Article
AN - SCOPUS:85101057801
SN - 0361-5235
VL - 50
SP - 1779
EP - 1785
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 4
ER -