Nanocluster-based ultralow-temperature driven oxide gate dielectrics for high-performance organic electronic devices

Jeong Wan Jo, Jingu Kang, Kyung Tae Kim, Seung Han Kang, Jae Cheol Shin, Seung Beom Shin, Yong Hoon Kim, Sung Kyu Park

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3) thin films for high-performance OTFTs. Nanocluster-based Al2O3 films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based Al2O3 films. A wide array of spectroscopic and surface analyses show that ultralow-temperature photochemical activation (<60 °C) induces the decomposition of chemical impurities and causes the densification of the metal-oxide film, resulting in a highly dense high-k Al2O3 dielectric layer from Al-13 nanocluster-based solutions. The fabricated nanocluster-based Al2O3 films exhibit a low leakage current density (<10–7 A/cm2) at 2 MV/cm and high dielectric breakdown strength (>6 MV/cm). Using this dielectric layer, precisely aligned microrod-shaped 2,7-dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C8-BTBT) single-crystal OTFTs were fabricated via solvent vapor annealing and photochemical patterning of the sacrificial layer.

Original languageEnglish
Article number5571
Pages (from-to)1-10
Number of pages10
JournalMaterials
Volume13
Issue number23
DOIs
StatePublished - Dec 2020

Keywords

  • Deep ultraviolet (DUV) photochemical activation
  • Low-temperature process
  • Organic thin-film transistor
  • Single-crystal organic semiconductor
  • Solution-processed metal-oxide gate dielectrics

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