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Nanolaminate Ferroelectric Transistor Enabling Wide-Reservoir In Sensor Neuromorphic Vision

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Abstract

This work reports a hardware-oriented hybrid reservoir computing (HRC) system based on a nanolaminate ferroelectric thin-film transistor (FeTFT) that unifies volatile and nonvolatile functions in a single three-terminal device. The HZO/HfO2/HZO gate stack modulates grain size and suppresses ferroelectric variability, enabling precise multilevel control and highly linear weight updates via the incremental step pulse with verify algorithm (ISPVA). Electrical input induces long-term memory, while optical excitation yields short-term memory, allowing dual-mode operation. Light-driven 4-bit reservoirs operate at picoampere currents (∼10 pW/device) and emulate nociceptive neuron behavior. Combining three wavelength-dependent reservoirs (405, 450, 532 nm) expands the feature space and improves classification accuracy. Using ISPVA-linearized readout, the system achieves 93.1% and 85.1% accuracies on MNIST and Fashion-MNIST, respectively exceeding prior FeTFT/memristor-based RC systems. This approach establishes a scalable, energy-efficient route toward multifunctional in-sensor neuromorphic computing based on a unified ferroelectric platform.

Original languageEnglish
Article numbere22251
JournalAdvanced Materials
Volume38
Issue number15
DOIs
StatePublished - 12 Mar 2026

Keywords

  • electrical and optical functionality
  • ferroelectric thin-film transistors
  • multi-wavelength
  • nanolaminate
  • synaptic devices
  • wide reservoir computing

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