Nanoscale depth-resolved electronic properties of SiO2/SiO x/SiO2 for device-tolerant electronics

E. J. Katz; Z. Zhang; H. L. Hughes; K. B. Chung; G. Lucovsky; L. J. Brillson

doi:10.1116/1.3543712

Nanoscale depth-resolved electronic properties of SiO₂/SiO _x/SiO₂ for device-tolerant electronics

E. J. Katz
, Z. Zhang
, H. L. Hughes
, K. B. Chung
, G. Lucovsky
, L. J. Brillson

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have used nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of device-tolerant oxides to measure the energy levels and spatial distribution of defects within nanocrystalline grains in an α -SiO ₂ matrix that counteract hole trapping and reduce CMOS transistor degradation due to ionizing radiation. DRCLS of 58 nm SiO₂ / SiO _x / SiO₂ oxide structures distinguishes spatially and electronically between the intrinsic SiO₂ and SiO_x -related defects. Annealing the α -SiO₂ oxide produces nanocrystalline Si grain formation that increases the concentration of defects 0.3 eV above the Si valence band that can trap electrons and block radiolytic proton transport. This study validates a carrier trapping mechanism for phase-separated device-tolerant SiO_x oxide layers.

Original language	English
Pages (from-to)	110271-110277
Number of pages	7
Journal	Journal of Vacuum Science and Technology B
Volume	29
Issue number	1
DOIs	https://doi.org/10.1116/1.3543712
State	Published - Jan 2011

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@article{81607a9424ef4a20b87a9e5499cf10a2,

title = "Nanoscale depth-resolved electronic properties of SiO2/SiO x/SiO2 for device-tolerant electronics",

abstract = "We have used nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of device-tolerant oxides to measure the energy levels and spatial distribution of defects within nanocrystalline grains in an α -SiO 2 matrix that counteract hole trapping and reduce CMOS transistor degradation due to ionizing radiation. DRCLS of 58 nm SiO2 / SiO x / SiO2 oxide structures distinguishes spatially and electronically between the intrinsic SiO2 and SiOx -related defects. Annealing the α -SiO2 oxide produces nanocrystalline Si grain formation that increases the concentration of defects 0.3 eV above the Si valence band that can trap electrons and block radiolytic proton transport. This study validates a carrier trapping mechanism for phase-separated device-tolerant SiOx oxide layers.",

author = "Katz, \{E. J.\} and Z. Zhang and Hughes, \{H. L.\} and Chung, \{K. B.\} and G. Lucovsky and Brillson, \{L. J.\}",

year = "2011",

month = jan,

doi = "10.1116/1.3543712",

language = "English",

volume = "29",

pages = "110271--110277",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Nanoscale depth-resolved electronic properties of SiO2/SiO x/SiO2 for device-tolerant electronics

AU - Katz, E. J.

AU - Zhang, Z.

AU - Hughes, H. L.

AU - Chung, K. B.

AU - Lucovsky, G.

AU - Brillson, L. J.

PY - 2011/1

Y1 - 2011/1

N2 - We have used nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of device-tolerant oxides to measure the energy levels and spatial distribution of defects within nanocrystalline grains in an α -SiO 2 matrix that counteract hole trapping and reduce CMOS transistor degradation due to ionizing radiation. DRCLS of 58 nm SiO2 / SiO x / SiO2 oxide structures distinguishes spatially and electronically between the intrinsic SiO2 and SiOx -related defects. Annealing the α -SiO2 oxide produces nanocrystalline Si grain formation that increases the concentration of defects 0.3 eV above the Si valence band that can trap electrons and block radiolytic proton transport. This study validates a carrier trapping mechanism for phase-separated device-tolerant SiOx oxide layers.

AB - We have used nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of device-tolerant oxides to measure the energy levels and spatial distribution of defects within nanocrystalline grains in an α -SiO 2 matrix that counteract hole trapping and reduce CMOS transistor degradation due to ionizing radiation. DRCLS of 58 nm SiO2 / SiO x / SiO2 oxide structures distinguishes spatially and electronically between the intrinsic SiO2 and SiOx -related defects. Annealing the α -SiO2 oxide produces nanocrystalline Si grain formation that increases the concentration of defects 0.3 eV above the Si valence band that can trap electrons and block radiolytic proton transport. This study validates a carrier trapping mechanism for phase-separated device-tolerant SiOx oxide layers.

UR - https://www.scopus.com/pages/publications/79551639021

U2 - 10.1116/1.3543712

DO - 10.1116/1.3543712

M3 - Article

AN - SCOPUS:79551639021

SN - 2166-2746

VL - 29

SP - 110271

EP - 110277

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 1

ER -

Nanoscale depth-resolved electronic properties of SiO₂/SiO _x/SiO₂ for device-tolerant electronics

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