Nanoscale depth-resolved electronic properties of SiO2/SiO x/SiO2 gate dielectrics for radiation-tolerant electronics

E. J. Katz; Z. Zhang; H. L. Hughes; K. B. Chung; G. Lucovsky; L. J. Brillson

doi:10.1109/ISDRS.2009.5378032

Nanoscale depth-resolved electronic properties of SiO₂/SiO _x/SiO₂ gate dielectrics for radiation-tolerant electronics

E. J. Katz
, Z. Zhang
, H. L. Hughes
, K. B. Chung
, G. Lucovsky
, L. J. Brillson

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378032
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 9 Dec 2009 → 11 Dec 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	9/12/09 → 11/12/09

Access to Document

10.1109/ISDRS.2009.5378032

Cite this

Katz, E. J., Zhang, Z., Hughes, H. L., Chung, K. B., Lucovsky, G., & Brillson, L. J. (2009). Nanoscale depth-resolved electronic properties of SiO₂/SiO _x/SiO₂ gate dielectrics for radiation-tolerant electronics. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 Article 5378032 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378032

@inproceedings{04e4cc00b6ad4386ad51d12196c69f45,

title = "Nanoscale depth-resolved electronic properties of SiO2/SiO x/SiO2 gate dielectrics for radiation-tolerant electronics",

author = "Katz, \{E. J.\} and Z. Zhang and Hughes, \{H. L.\} and Chung, \{K. B.\} and G. Lucovsky and Brillson, \{L. J.\}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378032",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Katz, EJ, Zhang, Z, Hughes, HL, Chung, KB, Lucovsky, G & Brillson, LJ 2009, Nanoscale depth-resolved electronic properties of SiO₂/SiO _x/SiO₂ gate dielectrics for radiation-tolerant electronics. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378032, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 9/12/09. https://doi.org/10.1109/ISDRS.2009.5378032

Nanoscale depth-resolved electronic properties of SiO₂/SiO _x/SiO₂ gate dielectrics for radiation-tolerant electronics. / Katz, E. J.; Zhang, Z.; Hughes, H. L. et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378032 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Katz, E. J.

AU - Zhang, Z.

AU - Hughes, H. L.

AU - Chung, K. B.

AU - Lucovsky, G.

AU - Brillson, L. J.

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AN - SCOPUS:77949352282

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BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

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