Native hole traps of ferromagnetic Ga1-xMnxAs layers on (100) GaAs substrates

I. T. Yoon; C. J. Park; H. Y. Cho; T. W. Kang; K. H. Kim; D. J. Kim

doi:10.1063/1.1629398

Native hole traps of ferromagnetic Ga_1-xMn_xAs layers on (100) GaAs substrates

I. T. Yoon
, C. J. Park
, H. Y. Cho
, T. W. Kang
, K. H. Kim
, D. J. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Deep-level transient spectroscopy (DLTS) was used to characterize native defects of Ga_1-xMn_x layers with x≈2.2% and x≈4.4% grown by molecular beam epitaxy (MBE). Three hole traps at about 0.38±0.01, 0.43±0.01, and 0.65±0.01 eV above the valence band maxima were observed. These traps were found to be associated with the gallium vacancy or the arsenic antisite complex, and single- and double-donor states of arsenic antisite.

Original language	English
Pages (from-to)	4354-4356
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	21
DOIs	https://doi.org/10.1063/1.1629398
State	Published - 24 Nov 2003

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title = "Native hole traps of ferromagnetic Ga1-xMnxAs layers on (100) GaAs substrates",

abstract = "Deep-level transient spectroscopy (DLTS) was used to characterize native defects of Ga1-xMnx layers with x≈2.2\% and x≈4.4\% grown by molecular beam epitaxy (MBE). Three hole traps at about 0.38±0.01, 0.43±0.01, and 0.65±0.01 eV above the valence band maxima were observed. These traps were found to be associated with the gallium vacancy or the arsenic antisite complex, and single- and double-donor states of arsenic antisite.",

author = "Yoon, \{I. T.\} and Park, \{C. J.\} and Cho, \{H. Y.\} and Kang, \{T. W.\} and Kim, \{K. H.\} and Kim, \{D. J.\}",

year = "2003",

month = nov,

day = "24",

doi = "10.1063/1.1629398",

language = "English",

volume = "83",

pages = "4354--4356",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Native hole traps of ferromagnetic Ga1-xMnxAs layers on (100) GaAs substrates

AU - Yoon, I. T.

AU - Park, C. J.

AU - Cho, H. Y.

AU - Kang, T. W.

AU - Kim, K. H.

AU - Kim, D. J.

PY - 2003/11/24

Y1 - 2003/11/24

N2 - Deep-level transient spectroscopy (DLTS) was used to characterize native defects of Ga1-xMnx layers with x≈2.2% and x≈4.4% grown by molecular beam epitaxy (MBE). Three hole traps at about 0.38±0.01, 0.43±0.01, and 0.65±0.01 eV above the valence band maxima were observed. These traps were found to be associated with the gallium vacancy or the arsenic antisite complex, and single- and double-donor states of arsenic antisite.

AB - Deep-level transient spectroscopy (DLTS) was used to characterize native defects of Ga1-xMnx layers with x≈2.2% and x≈4.4% grown by molecular beam epitaxy (MBE). Three hole traps at about 0.38±0.01, 0.43±0.01, and 0.65±0.01 eV above the valence band maxima were observed. These traps were found to be associated with the gallium vacancy or the arsenic antisite complex, and single- and double-donor states of arsenic antisite.

UR - https://www.scopus.com/pages/publications/0348107232

U2 - 10.1063/1.1629398

DO - 10.1063/1.1629398

M3 - Article

AN - SCOPUS:0348107232

SN - 0003-6951

VL - 83

SP - 4354

EP - 4356

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Native hole traps of ferromagnetic Ga_1-xMn_xAs layers on (100) GaAs substrates

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