Negative magnetoresistivity from electron-electron interaction effect in modulation doped n-Channel Si/Si1-xGex quantum well structures

D. H. Shin, S. K. Kim, S. D. Kim, J. K. Rhee, J. J. Harris, D. K. Maude, J. C. Portal

Research output: Contribution to journalArticlepeer-review

Abstract

Magnetoresistivity measurements are made on the two-dimensional electron gas in a Si/Si0.7Ge0.3 modulation-doped quantum well. The temperature (T)-dependent negative magnetoresistivity, ob- served below 0.1 T, clearly shows the effect of electron-electron interactions.

Original languageEnglish
Pages (from-to)649-656
Number of pages8
JournalPhysica Status Solidi (B): Basic Research
Volume223
Issue number3
DOIs
StatePublished - Feb 2001

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