Negative magnetoresistivity from electron-electron interaction effect in modulation doped n-Channel Si/Si1-xGex quantum well structures

D. H. Shin; S. K. Kim; S. D. Kim; J. K. Rhee; J. J. Harris; D. K. Maude; J. C. Portal

doi:10.1002/1521-3951(200102)223:3<649::AID-PSSB649>3.0.CO;2-0

Negative magnetoresistivity from electron-electron interaction effect in modulation doped n-Channel Si/Si_1-xGe_x quantum well structures

D. H. Shin
, S. K. Kim
, S. D. Kim
, J. K. Rhee
, J. J. Harris
, D. K. Maude
, J. C. Portal

Department of Electronics & Electrical Engineering

Dongguk University
University College London
CNRS

Research output: Contribution to journal › Article › peer-review

Abstract

Magnetoresistivity measurements are made on the two-dimensional electron gas in a Si/Si_0.7Ge_0.3 modulation-doped quantum well. The temperature (T)-dependent negative magnetoresistivity, ob_- served below 0.1 T, clearly shows the effect of electron-electron interactions.

Original language	English
Pages (from-to)	649-656
Number of pages	8
Journal	Physica Status Solidi (B): Basic Research
Volume	223
Issue number	3
DOIs	https://doi.org/10.1002/1521-3951(200102)223:3<649::AID-PSSB649>3.0.CO;2-0
State	Published - Feb 2001

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Shin, D. H., Kim, S. K., Kim, S. D., Rhee, J. K., Harris, J. J., Maude, D. K., & Portal, J. C. (2001). Negative magnetoresistivity from electron-electron interaction effect in modulation doped n-Channel Si/Si_1-xGe_x quantum well structures. Physica Status Solidi (B): Basic Research, 223(3), 649-656. https://doi.org/10.1002/1521-3951(200102)223:3<649::AID-PSSB649>3.0.CO;2-0

@article{f79924eb9f6b4da88eea8403e24b28ca,

title = "Negative magnetoresistivity from electron-electron interaction effect in modulation doped n-Channel Si/Si1-xGex quantum well structures",

abstract = "Magnetoresistivity measurements are made on the two-dimensional electron gas in a Si/Si0.7Ge0.3 modulation-doped quantum well. The temperature (T)-dependent negative magnetoresistivity, ob- served below 0.1 T, clearly shows the effect of electron-electron interactions.",

author = "Shin, \{D. H.\} and Kim, \{S. K.\} and Kim, \{S. D.\} and Rhee, \{J. K.\} and Harris, \{J. J.\} and Maude, \{D. K.\} and Portal, \{J. C.\}",

year = "2001",

month = feb,

doi = "10.1002/1521-3951(200102)223:3<649::AID-PSSB649>3.0.CO;2-0",

language = "English",

volume = "223",

pages = "649--656",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc",

number = "3",

}

TY - JOUR

T1 - Negative magnetoresistivity from electron-electron interaction effect in modulation doped n-Channel Si/Si1-xGex quantum well structures

AU - Shin, D. H.

AU - Kim, S. K.

AU - Kim, S. D.

AU - Rhee, J. K.

AU - Harris, J. J.

AU - Maude, D. K.

AU - Portal, J. C.

PY - 2001/2

Y1 - 2001/2

N2 - Magnetoresistivity measurements are made on the two-dimensional electron gas in a Si/Si0.7Ge0.3 modulation-doped quantum well. The temperature (T)-dependent negative magnetoresistivity, ob- served below 0.1 T, clearly shows the effect of electron-electron interactions.

AB - Magnetoresistivity measurements are made on the two-dimensional electron gas in a Si/Si0.7Ge0.3 modulation-doped quantum well. The temperature (T)-dependent negative magnetoresistivity, ob- served below 0.1 T, clearly shows the effect of electron-electron interactions.

UR - https://www.scopus.com/pages/publications/0035530753

U2 - 10.1002/1521-3951(200102)223:3<649::AID-PSSB649>3.0.CO;2-0

DO - 10.1002/1521-3951(200102)223:3<649::AID-PSSB649>3.0.CO;2-0

M3 - Article

AN - SCOPUS:0035530753

SN - 0370-1972

VL - 223

SP - 649

EP - 656

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 3

ER -

Negative magnetoresistivity from electron-electron interaction effect in modulation doped n-Channel Si/Si_1-xGe_x quantum well structures

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