Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization

Sunghun Kim, Juri Kim, Dahye Kim, Jihyung Kim, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

HfO2-based ferroelectric tunnel junctions (FTJs) are promising nonvolatile memory types for neural network applications because of their speed, low power, and excellent complementary metal-oxide semiconductor compatibility. Specifically, HfAlOx (HAO) has led to extensive research efforts owing to its outstanding ferroelectric performance. This is a result of the fact that the atomic radius of Al is smaller than that of Hf. In this study, we investigate the metal-ferroelectric-semiconductor device with an Al doping concentration of 2% that was annealed at 900 °C. A high-remnant polarization (Pr) value of 39.85 µC/cm2 and endurance were achieved by using the polarization switching positive-up-negative-down measurement method at this annealing condition. Our device shows long-term potentiation and depression properties, including high linearity and multiple conductance states for neuromorphic applications. Moreover, paired-pulse facilitation was implemented to mimic human synaptic functions. The construction of 16 states comprising four bits was achieved by employing reservoir computing with the FTJ device functioning as a physical reservoir. Finally, the results obtained from the experiment show promising outcomes for the ferroelectric memory characteristics and synaptic properties of the manufactured HAO device.

Original languageEnglish
Article number101102
JournalAPL Materials
Volume11
Issue number10
DOIs
StatePublished - 1 Oct 2023

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