Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment
- M. H. Cho
- , K. B. Chung
- , C. N. Whang
- , D. H. Ko
- , J. H. Lee
- , N. I. Lee
- Korea Research Institute of Standards and Science
- Yonsei University
- Samsung
Research output: Contribution to journal › Article › peer-review
30
Scopus
citations