@inproceedings{5b80fa93989943fa9d0efd7f021d0aeb,
title = "Nitrogen engineering in titanium based high-k gate dielectrics on Ge",
abstract = "In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO2 interfacial layer to its oxynitride, and thus forming a TiO2/GeOxNy/Ge stacked-gate structure with improved interfacial and electrical properties. Charge trapping, transient and reliability properties of nitrided gate dielectrics have also been investigated.",
keywords = "Germanium, Reliability, TiO, Transient",
author = "C. Mahata and Bera, {M. K.} and Bose, {P. K.} and Maiti, {C. K.}",
year = "2007",
doi = "10.1109/IWPSD.2007.4472485",
language = "English",
isbn = "9781424417285",
series = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",
pages = "201--204",
booktitle = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",
note = "14th International Workshop on the Physics of Semiconductor Devices, IWPSD ; Conference date: 16-12-2007 Through 20-12-2007",
}