Nitrogen engineering in titanium based high-k gate dielectrics on Ge

C. Mahata, M. K. Bera, P. K. Bose, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO2 interfacial layer to its oxynitride, and thus forming a TiO2/GeOxNy/Ge stacked-gate structure with improved interfacial and electrical properties. Charge trapping, transient and reliability properties of nitrided gate dielectrics have also been investigated.

Original languageEnglish
Title of host publicationProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages201-204
Number of pages4
DOIs
StatePublished - 2007
Event14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India
Duration: 16 Dec 200720 Dec 2007

Publication series

NameProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Conference

Conference14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Country/TerritoryIndia
CityMumbai
Period16/12/0720/12/07

Keywords

  • Germanium
  • Reliability
  • TiO
  • Transient

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