Noise characterization of ALD HfO2 MOS capacitors with different metal (Au, Pd and Pt) gates

S. Mallik; C. Mukherjee; C. Mahata; G. K. Dalapati; D. Z. Chi; C. K. Maiti

doi:10.1117/12.926979

Noise characterization of ALD HfO₂ MOS capacitors with different metal (Au, Pd and Pt) gates

S. Mallik, C. Mukherjee, C. Mahata, G. K. Dalapati, D. Z. Chi, C. K. Maiti

Department of Electronics & Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ultra-thin HfO₂ high-k gate dielectric has been deposited directly on strained Si_0.81Ge_0.19by atomic layer deposition (ALD). The effects of metal gate electrodes (Au, Pd and Pt) on dielectric properties and charge trapping behavior of metal-insulator- semiconductor (MIS) capacitors are investigated. Grazing incidence X-ray diffraction (GIXRD) analysis shows that the conversion from amorphous to crystalline phase start to appear in the HfO₂ films when annealed between 400-500°C. The measured ΔV_fband hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Low-frequency noise characteristics have been measured using MIS capacitors with contact area ∼ 2×10^-3 cm². The power spectral densities (PSD) of the MIS capacitors with metal gate electrodes are compared and their bias dependencies are reported. While a two level random telegraph signal (RTS) is observed at low voltage, multilevel RTS is observed at higher bias voltages.

Original language	English
Title of host publication	16th International Workshop on Physics of Semiconductor Devices
Publisher	SPIE
ISBN (Print)	9780819493002
DOIs	https://doi.org/10.1117/12.926979
State	Published - 2012
Event	16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011 - Kanpur, India Duration: 19 Dec 2011 → 22 Dec 2011

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8549
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011
Country/Territory	India
City	Kanpur
Period	19/12/11 → 22/12/11

Keywords

ALD
Flicker Noise
Random telegraph signal
SiGe

Access to Document

10.1117/12.926979

Cite this

Mallik, S., Mukherjee, C., Mahata, C., Dalapati, G. K., Chi, D. Z., & Maiti, C. K. (2012). Noise characterization of ALD HfO₂ MOS capacitors with different metal (Au, Pd and Pt) gates. In 16th International Workshop on Physics of Semiconductor Devices Article 854924 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8549). SPIE. https://doi.org/10.1117/12.926979

@inproceedings{51457ae5a31142c68d49c45f0c1fdff4,

title = "Noise characterization of ALD HfO2 MOS capacitors with different metal (Au, Pd and Pt) gates",

abstract = "Ultra-thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19by atomic layer deposition (ALD). The effects of metal gate electrodes (Au, Pd and Pt) on dielectric properties and charge trapping behavior of metal-insulator- semiconductor (MIS) capacitors are investigated. Grazing incidence X-ray diffraction (GIXRD) analysis shows that the conversion from amorphous to crystalline phase start to appear in the HfO2 films when annealed between 400-500°C. The measured ΔVfband hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Low-frequency noise characteristics have been measured using MIS capacitors with contact area ∼ 2×10-3 cm2. The power spectral densities (PSD) of the MIS capacitors with metal gate electrodes are compared and their bias dependencies are reported. While a two level random telegraph signal (RTS) is observed at low voltage, multilevel RTS is observed at higher bias voltages.",

keywords = "ALD, Flicker Noise, Random telegraph signal, SiGe",

author = "S. Mallik and C. Mukherjee and C. Mahata and Dalapati, {G. K.} and Chi, {D. Z.} and Maiti, {C. K.}",

year = "2012",

doi = "10.1117/12.926979",

language = "English",

isbn = "9780819493002",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

booktitle = "16th International Workshop on Physics of Semiconductor Devices",

address = "United States",

note = "16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011 ; Conference date: 19-12-2011 Through 22-12-2011",

}

Mallik, S, Mukherjee, C, Mahata, C, Dalapati, GK, Chi, DZ & Maiti, CK 2012, Noise characterization of ALD HfO₂ MOS capacitors with different metal (Au, Pd and Pt) gates. in 16th International Workshop on Physics of Semiconductor Devices., 854924, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8549, SPIE, 16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011, Kanpur, India, 19/12/11. https://doi.org/10.1117/12.926979

Noise characterization of ALD HfO₂ MOS capacitors with different metal (Au, Pd and Pt) gates. / Mallik, S.; Mukherjee, C.; Mahata, C. et al.
16th International Workshop on Physics of Semiconductor Devices. SPIE, 2012. 854924 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8549).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Noise characterization of ALD HfO2 MOS capacitors with different metal (Au, Pd and Pt) gates

AU - Mallik, S.

AU - Mukherjee, C.

AU - Mahata, C.

AU - Dalapati, G. K.

AU - Chi, D. Z.

AU - Maiti, C. K.

PY - 2012

Y1 - 2012

N2 - Ultra-thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19by atomic layer deposition (ALD). The effects of metal gate electrodes (Au, Pd and Pt) on dielectric properties and charge trapping behavior of metal-insulator- semiconductor (MIS) capacitors are investigated. Grazing incidence X-ray diffraction (GIXRD) analysis shows that the conversion from amorphous to crystalline phase start to appear in the HfO2 films when annealed between 400-500°C. The measured ΔVfband hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Low-frequency noise characteristics have been measured using MIS capacitors with contact area ∼ 2×10-3 cm2. The power spectral densities (PSD) of the MIS capacitors with metal gate electrodes are compared and their bias dependencies are reported. While a two level random telegraph signal (RTS) is observed at low voltage, multilevel RTS is observed at higher bias voltages.

AB - Ultra-thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19by atomic layer deposition (ALD). The effects of metal gate electrodes (Au, Pd and Pt) on dielectric properties and charge trapping behavior of metal-insulator- semiconductor (MIS) capacitors are investigated. Grazing incidence X-ray diffraction (GIXRD) analysis shows that the conversion from amorphous to crystalline phase start to appear in the HfO2 films when annealed between 400-500°C. The measured ΔVfband hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Low-frequency noise characteristics have been measured using MIS capacitors with contact area ∼ 2×10-3 cm2. The power spectral densities (PSD) of the MIS capacitors with metal gate electrodes are compared and their bias dependencies are reported. While a two level random telegraph signal (RTS) is observed at low voltage, multilevel RTS is observed at higher bias voltages.

KW - ALD

KW - Flicker Noise

KW - Random telegraph signal

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=84899965408&partnerID=8YFLogxK

U2 - 10.1117/12.926979

DO - 10.1117/12.926979

M3 - Conference contribution

AN - SCOPUS:84899965408

SN - 9780819493002

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - 16th International Workshop on Physics of Semiconductor Devices

PB - SPIE

T2 - 16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011

Y2 - 19 December 2011 through 22 December 2011

ER -