Non-lithographic growth of core-shell GaAs nanowires on Si for optoelectronic applications

Myung Ho Bae, Bum Kyu Kim, Dong Han Ha, Sang Jun Lee, Rahul Sharma, Kyoung Jin Choi, Ju Jin Kim, Won Jun Choi, Jae Cheol Shin

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We demonstrated a nonlithographic method for integrating GaAs nanowire (NW) array-based light-emitting diodes (LEDs) on silicon (Si) substrates. A sub-100 nm hole array on a deposited SiO2 layer was patterned on an entire 2 in. Si wafer based on a sacrificed self-assembled InAs NW array. Then, a core-shell n-p junction GaAs NW array was grown on exposed Si windows via the selective-area growth method. The electrical properties of the core-shell n-p junction GaAs NW has been measured and compared to those of the core-shell junction NWs formed via the self-assembled growth method. Room temperature electroluminescence was successfully observed from the fabricated GaAs NW array-based LEDs. The core-shell junction III-V NW array epitaxially grown on a ubiquitous Si platform could be applied to future low-cost optical devices.

Original languageEnglish
Pages (from-to)1510-1515
Number of pages6
JournalCrystal Growth and Design
Volume14
Issue number4
DOIs
StatePublished - 2 Apr 2014

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