Nondestructive spectroscopic method to detect MnAs metallic nanocrystals in annealed GaAs:Mn

S. S.A. Seo; T. W. Noh; Y. W. Kim; J. D. Lim; Y. D. Park; Y. S. Kim; Z. G. Khim; H. C. Jeon; T. W. Kang; S. J. Pearton

doi:10.1063/1.1739524

Nondestructive spectroscopic method to detect MnAs metallic nanocrystals in annealed GaAs:Mn

S. S.A. Seo
, T. W. Noh
, Y. W. Kim
, J. D. Lim
, Y. D. Park
, Y. S. Kim
, Z. G. Khim
, H. C. Jeon
, T. W. Kang
, S. J. Pearton

Seoul National University
Dongguk University
University of Florida

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

An optical spectroscopic method, to monitor NiAs-type MnAs (α-MnAs) nanocrystals in (Ga, Mn)As diluted magnetic semiconductors, was presented. Mn ion implantation of low temperature (LT) GaAs epitaxial thin films followed by rapid thermal annealing (RTA) was utilized to yield embedded ferromagnetic α-MnAs nanoclusters in a GaAs:Mn matrix. It was observed that in optical spectra, the annealed samples showed resonant absorption at 0.9 eV photon energy, which was due to resonant surface plasma oscillation of spherical metallic phases embedded in LT GaAs. The metallic clusters in LT GaAs were identified as α-MnAs nanocrystals by comparing them with Maxwell-Garnett theory based simulations.

Original language	English
Pages (from-to)	8172-8177
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	12
DOIs	https://doi.org/10.1063/1.1739524
State	Published - 15 Jun 2004

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@article{bb3170610b0a43ffa269bcfc21c0cd9d,

title = "Nondestructive spectroscopic method to detect MnAs metallic nanocrystals in annealed GaAs:Mn",

abstract = "An optical spectroscopic method, to monitor NiAs-type MnAs (α-MnAs) nanocrystals in (Ga, Mn)As diluted magnetic semiconductors, was presented. Mn ion implantation of low temperature (LT) GaAs epitaxial thin films followed by rapid thermal annealing (RTA) was utilized to yield embedded ferromagnetic α-MnAs nanoclusters in a GaAs:Mn matrix. It was observed that in optical spectra, the annealed samples showed resonant absorption at 0.9 eV photon energy, which was due to resonant surface plasma oscillation of spherical metallic phases embedded in LT GaAs. The metallic clusters in LT GaAs were identified as α-MnAs nanocrystals by comparing them with Maxwell-Garnett theory based simulations.",

author = "Seo, \{S. S.A.\} and Noh, \{T. W.\} and Kim, \{Y. W.\} and Lim, \{J. D.\} and Park, \{Y. D.\} and Kim, \{Y. S.\} and Khim, \{Z. G.\} and Jeon, \{H. C.\} and Kang, \{T. W.\} and Pearton, \{S. J.\}",

year = "2004",

month = jun,

day = "15",

doi = "10.1063/1.1739524",

language = "English",

volume = "95",

pages = "8172--8177",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Nondestructive spectroscopic method to detect MnAs metallic nanocrystals in annealed GaAs:Mn

AU - Seo, S. S.A.

AU - Noh, T. W.

AU - Kim, Y. W.

AU - Lim, J. D.

AU - Park, Y. D.

AU - Kim, Y. S.

AU - Khim, Z. G.

AU - Jeon, H. C.

AU - Kang, T. W.

AU - Pearton, S. J.

PY - 2004/6/15

Y1 - 2004/6/15

N2 - An optical spectroscopic method, to monitor NiAs-type MnAs (α-MnAs) nanocrystals in (Ga, Mn)As diluted magnetic semiconductors, was presented. Mn ion implantation of low temperature (LT) GaAs epitaxial thin films followed by rapid thermal annealing (RTA) was utilized to yield embedded ferromagnetic α-MnAs nanoclusters in a GaAs:Mn matrix. It was observed that in optical spectra, the annealed samples showed resonant absorption at 0.9 eV photon energy, which was due to resonant surface plasma oscillation of spherical metallic phases embedded in LT GaAs. The metallic clusters in LT GaAs were identified as α-MnAs nanocrystals by comparing them with Maxwell-Garnett theory based simulations.

AB - An optical spectroscopic method, to monitor NiAs-type MnAs (α-MnAs) nanocrystals in (Ga, Mn)As diluted magnetic semiconductors, was presented. Mn ion implantation of low temperature (LT) GaAs epitaxial thin films followed by rapid thermal annealing (RTA) was utilized to yield embedded ferromagnetic α-MnAs nanoclusters in a GaAs:Mn matrix. It was observed that in optical spectra, the annealed samples showed resonant absorption at 0.9 eV photon energy, which was due to resonant surface plasma oscillation of spherical metallic phases embedded in LT GaAs. The metallic clusters in LT GaAs were identified as α-MnAs nanocrystals by comparing them with Maxwell-Garnett theory based simulations.

UR - https://www.scopus.com/pages/publications/3142607590

U2 - 10.1063/1.1739524

DO - 10.1063/1.1739524

M3 - Article

AN - SCOPUS:3142607590

SN - 0021-8979

VL - 95

SP - 8172

EP - 8177

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Nondestructive spectroscopic method to detect MnAs metallic nanocrystals in annealed GaAs:Mn

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