Nonlinear characteristics of complementary resistive switching in HfAlOx-Based memristor for high-density cross-point array structure

Junhyeok Choi, Sungjun Kim

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17 Scopus citations

Abstract

In this work, we present the nonlinear current-voltage (I-V) characteristics of a complementary resistive switching (CRS)-like curve from a HfAlOx-based memristor, used to implement a high-density cross-point array. A Pt/HfAlOx/TiN device has lower on-current and larger selectivity compared to Pt/HfO2/TiN or Pt/Al2O3/TiN devices. It has been shown that the on-current and first reset peak current after the forming process are crucial in obtaining a CRS-like curve. We demonstrate transient CRS-like characteristics with high nonlinearity under pulse response for practical applications. Finally, after finding the optimal conditions for high selectivity, the calculated read margin proves that a Pt/HfAlOx/TiN device with a CRS-like curve is most suitable for use in a high-density cross-point array. Our results suggest that the built-in selector properties in a Pt/HfAlOx/TiN single layer device offer considerable potential in terms of the simplicity of the processes involved in the cross-point structure.

Original languageEnglish
Article number765
JournalCoatings
Volume10
Issue number8
DOIs
StatePublished - Aug 2020

Keywords

  • Complementary resistive switching
  • HfAlO-based memristor
  • Microstructures
  • Nonlinearity

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