Nonlinear quenching in a monolithically integrated semiconductor laser logic device

Woong Jung; Young Se Kwon

doi:10.1143/JJAP.28.L1242

Nonlinear quenching in a monolithically integrated semiconductor laser logic device

Woong Jung, Young Se Kwon

Division of System Semiconductor

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A semiconductor laser logic device with GaAs/Al_0.3Ga_0.7As double heterostructure is fabricated. A main laser and a control laser are monolithically integrated in the cross-coupled structure in order to bring about optical quenching. This monolithic device is not only capable of conventional linear quenching but also new nonlinear quenching by the in-homogeneous current injection of the control laser. It can be used as a digital optical inverter having small trigger energy. The maximum efficiency of nonlinear quenching is 0.67 times that of the direct modulation of the main laser and 13 times that of linear quenching. Compared to conventional optical inverters based on optical quenching, this nonlinear quenching will improve the efficiency significantly.

Original language	English
Pages (from-to)	L1242-L1245
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	28
Issue number	7 A
DOIs	https://doi.org/10.1143/JJAP.28.L1242
State	Published - Jul 1989

Keywords

GaAs/AIGaAs
Optical bistability
Optical inverter
Quenching
Rooftop mirror

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10.1143/JJAP.28.L1242

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title = "Nonlinear quenching in a monolithically integrated semiconductor laser logic device",

abstract = "A semiconductor laser logic device with GaAs/Al0.3Ga0.7As double heterostructure is fabricated. A main laser and a control laser are monolithically integrated in the cross-coupled structure in order to bring about optical quenching. This monolithic device is not only capable of conventional linear quenching but also new nonlinear quenching by the in-homogeneous current injection of the control laser. It can be used as a digital optical inverter having small trigger energy. The maximum efficiency of nonlinear quenching is 0.67 times that of the direct modulation of the main laser and 13 times that of linear quenching. Compared to conventional optical inverters based on optical quenching, this nonlinear quenching will improve the efficiency significantly.",

keywords = "GaAs/AIGaAs, Optical bistability, Optical inverter, Quenching, Rooftop mirror",

author = "Woong Jung and Kwon, {Young Se}",

year = "1989",

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AU - Kwon, Young Se

PY - 1989/7

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N2 - A semiconductor laser logic device with GaAs/Al0.3Ga0.7As double heterostructure is fabricated. A main laser and a control laser are monolithically integrated in the cross-coupled structure in order to bring about optical quenching. This monolithic device is not only capable of conventional linear quenching but also new nonlinear quenching by the in-homogeneous current injection of the control laser. It can be used as a digital optical inverter having small trigger energy. The maximum efficiency of nonlinear quenching is 0.67 times that of the direct modulation of the main laser and 13 times that of linear quenching. Compared to conventional optical inverters based on optical quenching, this nonlinear quenching will improve the efficiency significantly.

AB - A semiconductor laser logic device with GaAs/Al0.3Ga0.7As double heterostructure is fabricated. A main laser and a control laser are monolithically integrated in the cross-coupled structure in order to bring about optical quenching. This monolithic device is not only capable of conventional linear quenching but also new nonlinear quenching by the in-homogeneous current injection of the control laser. It can be used as a digital optical inverter having small trigger energy. The maximum efficiency of nonlinear quenching is 0.67 times that of the direct modulation of the main laser and 13 times that of linear quenching. Compared to conventional optical inverters based on optical quenching, this nonlinear quenching will improve the efficiency significantly.

KW - GaAs/AIGaAs

KW - Optical bistability

KW - Optical inverter

KW - Quenching

KW - Rooftop mirror

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SP - L1242-L1245

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 7 A

ER -

Nonlinear quenching in a monolithically integrated semiconductor laser logic device

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