Novel heterodimensional diodes and transistors

M. S. Shur, W. C. Peatman, H. Park, W. Grimm, M. Hurt

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

We describe novel heterodimensional devices which utilize Schottky barriers to a two-dimensional (2D) electron gas. These devices include a 2D-3D Schottky diode, an AlGaAs GaAs Schottky Gated Resonant Tunneling Transistor (SGRTT), an AlGaAs InGaAs 2D Metal Semiconductor Field Effect Transistor (2D MESFET), and a Coaxial MESFET. These devices hold promise of ultra low power, high speed operation. The 1 micron wide 2D MESFET, which has a very low output conductance and a steep subthreshold slope, exhibited the highest transconductance of any 1 μm wide device.

Original languageEnglish
Pages (from-to)1727-1730
Number of pages4
JournalSolid-State Electronics
Volume38
Issue number9
DOIs
StatePublished - Sep 1995

Keywords

  • 2DEG
  • MESFET
  • Schottky
  • tunneling

Fingerprint

Dive into the research topics of 'Novel heterodimensional diodes and transistors'. Together they form a unique fingerprint.

Cite this