Abstract
We describe novel heterodimensional devices which utilize Schottky barriers to a two-dimensional (2D) electron gas. These devices include a 2D-3D Schottky diode, an AlGaAs GaAs Schottky Gated Resonant Tunneling Transistor (SGRTT), an AlGaAs InGaAs 2D Metal Semiconductor Field Effect Transistor (2D MESFET), and a Coaxial MESFET. These devices hold promise of ultra low power, high speed operation. The 1 micron wide 2D MESFET, which has a very low output conductance and a steep subthreshold slope, exhibited the highest transconductance of any 1 μm wide device.
Original language | English |
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Pages (from-to) | 1727-1730 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 38 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1995 |
Keywords
- 2DEG
- MESFET
- Schottky
- tunneling