Novel heterodimensional diodes and transistors

M. S. Shur; W. C. Peatman; H. Park; W. Grimm; M. Hurt

doi:10.1016/0038-1101(95)00038-U

Novel heterodimensional diodes and transistors

M. S. Shur, W. C. Peatman, H. Park, W. Grimm, M. Hurt

Department of Electronics & Electrical Engineering

University of Virginia

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We describe novel heterodimensional devices which utilize Schottky barriers to a two-dimensional (2D) electron gas. These devices include a 2D-3D Schottky diode, an AlGaAs GaAs Schottky Gated Resonant Tunneling Transistor (SGRTT), an AlGaAs InGaAs 2D Metal Semiconductor Field Effect Transistor (2D MESFET), and a Coaxial MESFET. These devices hold promise of ultra low power, high speed operation. The 1 micron wide 2D MESFET, which has a very low output conductance and a steep subthreshold slope, exhibited the highest transconductance of any 1 μm wide device.

Original language	English
Pages (from-to)	1727-1730
Number of pages	4
Journal	Solid-State Electronics
Volume	38
Issue number	9
DOIs	https://doi.org/10.1016/0038-1101(95)00038-U
State	Published - Sep 1995

Keywords

2DEG
MESFET
Schottky
tunneling

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10.1016/0038-1101(95)00038-U

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title = "Novel heterodimensional diodes and transistors",

abstract = "We describe novel heterodimensional devices which utilize Schottky barriers to a two-dimensional (2D) electron gas. These devices include a 2D-3D Schottky diode, an AlGaAs GaAs Schottky Gated Resonant Tunneling Transistor (SGRTT), an AlGaAs InGaAs 2D Metal Semiconductor Field Effect Transistor (2D MESFET), and a Coaxial MESFET. These devices hold promise of ultra low power, high speed operation. The 1 micron wide 2D MESFET, which has a very low output conductance and a steep subthreshold slope, exhibited the highest transconductance of any 1 μm wide device.",

keywords = "2DEG, MESFET, Schottky, tunneling",

author = "Shur, \{M. S.\} and Peatman, \{W. C.\} and H. Park and W. Grimm and M. Hurt",

year = "1995",

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doi = "10.1016/0038-1101(95)00038-U",

language = "English",

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journal = "Solid-State Electronics",

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T1 - Novel heterodimensional diodes and transistors

AU - Shur, M. S.

AU - Peatman, W. C.

AU - Park, H.

AU - Grimm, W.

AU - Hurt, M.

PY - 1995/9

Y1 - 1995/9

N2 - We describe novel heterodimensional devices which utilize Schottky barriers to a two-dimensional (2D) electron gas. These devices include a 2D-3D Schottky diode, an AlGaAs GaAs Schottky Gated Resonant Tunneling Transistor (SGRTT), an AlGaAs InGaAs 2D Metal Semiconductor Field Effect Transistor (2D MESFET), and a Coaxial MESFET. These devices hold promise of ultra low power, high speed operation. The 1 micron wide 2D MESFET, which has a very low output conductance and a steep subthreshold slope, exhibited the highest transconductance of any 1 μm wide device.

AB - We describe novel heterodimensional devices which utilize Schottky barriers to a two-dimensional (2D) electron gas. These devices include a 2D-3D Schottky diode, an AlGaAs GaAs Schottky Gated Resonant Tunneling Transistor (SGRTT), an AlGaAs InGaAs 2D Metal Semiconductor Field Effect Transistor (2D MESFET), and a Coaxial MESFET. These devices hold promise of ultra low power, high speed operation. The 1 micron wide 2D MESFET, which has a very low output conductance and a steep subthreshold slope, exhibited the highest transconductance of any 1 μm wide device.

KW - 2DEG

KW - MESFET

KW - Schottky

KW - tunneling

UR - https://www.scopus.com/pages/publications/0029378379

U2 - 10.1016/0038-1101(95)00038-U

DO - 10.1016/0038-1101(95)00038-U

M3 - Article

AN - SCOPUS:0029378379

SN - 0038-1101

VL - 38

SP - 1727

EP - 1730

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Novel heterodimensional diodes and transistors

Abstract

Keywords

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