Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor

Jung Inn Sohn, Su Seok Choi, Stephen M. Morris, James S. Bendall, Harry J. Coles, Woong Ki Hong, Gunho Jo, Takhee Lee, Mark E. Welland

Research output: Contribution to journalArticlepeer-review

98 Scopus citations

Abstract

We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 104, a long retention time of over 4 × 104 s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.

Original languageEnglish
Pages (from-to)4316-4320
Number of pages5
JournalNano Letters
Volume10
Issue number11
DOIs
StatePublished - 10 Nov 2010

Keywords

  • ferroelectric nanoparticles
  • nonvolatile memory
  • Semiconductor nanowires

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