Abstract
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 104, a long retention time of over 4 × 104 s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.
Original language | English |
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Pages (from-to) | 4316-4320 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 10 |
Issue number | 11 |
DOIs | |
State | Published - 10 Nov 2010 |
Keywords
- ferroelectric nanoparticles
- nonvolatile memory
- Semiconductor nanowires